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相关论文: Weak-antilocalization and Surface Dominated Transp…

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We report the growth of highly c-axis oriented topological insulator (TI) BiSbTe1.5Se1.5 (BSTS) thin films by pulsed laser deposition (PLD) technique. The various growth parameters such as substrate temperature, Argon pressure in the…

材料科学 · 物理学 2019-10-21 Atul Pandey , Sourabh Singh , Bishnupada Ghosh , Subhadip Manna , Rk Gopal , Chiranjib Mitra

Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted…

The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We…

强关联电子 · 物理学 2016-12-02 R. K. Gopal , Sourabh Singh , Arpita Mandal , Jit Sarkar , Chiranjib Mitra

We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more…

强关联电子 · 物理学 2020-12-08 Shama , Goutam Sheet , Yogesh Singh

Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…

材料科学 · 物理学 2022-07-05 Yogesh Kumar , Prince Sharma , V. P. S. Awana

Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly…

介观与纳米尺度物理 · 物理学 2017-02-07 Zhe Luo , Jifa Tian , Mithun Srinivasan , Yong P. Chen , Xianfan Xu

We report that epitaxial Sr2IrO4 thin-films can be selectively grown using pulsed laser deposition (PLD). Due to the competition between the Ruddlesden-Popper phases of strontium iridates (Sr_{n+1}Ir_{n}O_{3n+1}), conventional PLD methods…

强关联电子 · 物理学 2016-12-06 S. S. A. Seo , J. Nichols , J. Hwang , J. Terzic , J. H. Gruenewald , M. Souri , J. Thompson , J. G. Connell , G. Cao

Thin films of the pyrochlore iridates along the [111] direction have drawn significant attention to investigate exotic correlated topological phenomena. Here, we report the fabrication of Eu$_2$Ir$_2$O$_7$ thin films via reactive solid…

Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…

介观与纳米尺度物理 · 物理学 2014-03-04 Li Zhang , Merav Dolev , Qi I. Yang , Robert H. Hammond , Bo Zhou , Alexander Palevski , Yulin Chen , Aharon Kapitulnik

We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements.…

强关联电子 · 物理学 2017-12-06 Sourabh Singh , R. K. Gopal , Jit Sarkar , Atul Pandey , Bhavesh G. Patel , Chiranjib Mitra

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of…

介观与纳米尺度物理 · 物理学 2012-07-25 Ion Garate , Leonid Glazman

We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 \mu m). Volume carrier density decreased with thickness,…

Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…

The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal…

A topological insulator (TI), a new quantum state featured with the topologically-protected surface state (TSS) originating from its peculiar topology in band structure, has attracted much interest due to academic and practical importance.…

材料科学 · 物理学 2016-12-14 Seong Won Cho , Kwang-Chon Kim , Seong Keun Kim , Byung-ki Cheong , Jin-Sang Kim , Suyoun Lee

In this paper, we report the growth of NaxCoO2 thin films by pulsed-laser deposition (PLD). It is shown that the concentration of sodium is very sensitive to the substrate temperature and the target-substrate distance due to the evaporation…

材料科学 · 物理学 2007-05-23 X. P. Zhang , Y. S. Xiao , H. Zhou , B. T. Xie , C. X. Yang , Y. G. Zhao

We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an…

介观与纳米尺度物理 · 物理学 2012-01-19 Hadar Steinberg , Jean-Baptiste Laloë , Valla Fatemi , Jagadeesh S. Moodera , Pablo Jarillo-Herrero

MXenes stand out from other 2D materials because they combine very good electrical conductivity with hydrophilicity, allowing cost-effective processing as thin films. Therefore, there is a high fundamental interest in unraveling the…

Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We…

Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…

介观与纳米尺度物理 · 物理学 2016-01-26 Yumei Jing , Shaoyun Huang , Kai Zhang , Jinxiong Wu , Yunfan Guo , Hailin Peng , Zhongfan Liu , H. Q. Xu
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