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相关论文: Phase separation in doped Mott insulators

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The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magneto-resistance, and high-temperature superconductivity in layered…

Many Mott systems feature a first-order metal-insulator transition at finite temperatures, with an associated phase coexistence region displaying inhomogeneities and local phase separation. Here one typically finds "bubbles" or domains of…

Results from transport measurements in individual $W_{x}V_{1-x}O_{2}$ nanowires with varying extents of $W$ doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition…

强关联电子 · 物理学 2015-05-20 Tai-Lung Wu , Luisa Whittaker , Sarbajit Banerjee , G. Sambandamurthy

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

While doping is widely used for tuning physical properties of perovskites in experiments, it remains a challenge to exactly know how doping achieves the desired effects. Here, we propose an empirical and computationally tractable model to…

材料科学 · 物理学 2019-01-30 J. Liu , L. Jin , Z. Jiang , L. Liu , L. Himanen , J. Wei , N. Zhang , D. Wang , C. -L. Jia

For continuous Mott metal-insulator transitions in layered two dimensional systems, we demonstrate the phenomenon of dimensional decoupling: the system behaves as a three-dimensional metal in the Fermi liquid side but as a stack of…

强关联电子 · 物理学 2016-09-08 Liujun Zou , T. Senthil

$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition…

强关联电子 · 物理学 2021-01-18 Chang-Yong Kim , Tetiana Slusar , Jinchul Cho , Hyun-Tak Kim

Vanadium dioxide undergoes a first order metal-insulator transition at 340 K. In this work, we develop and carry out state of the art linear scaling DFT calculations refined with non-local dynamical mean-field theory. We identify a complex…

We show that the doping-controlled superconductor-insulator transition (SIT) in a high critical temperature cuprate system (Bi2Sr2-xLaxCaCu2O8+delta) exhibits a fundamentally different behavior than is expected from conventional SIT. At the…

超导电性 · 物理学 2007-05-23 Seongshik Oh , Trevis A. Crane , D. J. Van Harlingen , J. N. Eckstein

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2…

强关联电子 · 物理学 2017-12-06 Shuang Qiao , Xintong Li , Naizhou Wang , Wei Ruan , Cun Ye , Peng Cai , Zhenqi Hao , Hong Yao , Xianhui Chen , Jian Wu , Yayu Wang , Zheng Liu

Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…

强关联电子 · 物理学 2007-12-11 M. Aichhorn , E. Arrigoni , M. Potthoff , W. Hanke

Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO_{3}. Here we report on the results of such doping over broad ranges of temperature and carrier concentration…

Within the framework of kinetic-energy-driven superconductivity, the asymmetric doping dependence of superconductivity between the hole- and electron-doped triangular-lattice superconductors has been studied. It is shown that although the…

超导电性 · 物理学 2018-05-09 Yu Lan , Xixiao Ma , Ling Qin , Yongjun Wang , Shiping Feng

One path to high-temperature cuprate superconductors is doping a Mott insulator. In this paper, we study this system from the view point of higher-form symmetries. On the introduction of slave bosons, the $t-J$ model at a finite hole doping…

强关联电子 · 物理学 2019-09-04 Ki-Seok Kim , Yuji Hirono

We investigate the double layered Sr$_{3}$(Ru$_{1-x}$Mn$_{x}$)$_{2}$O$_{7}$ and its doping-induced quantum phase transition (QPT) from a metal to an antiferromagnetic (AFM) Mott insulator. Using spectroscopic imaging with the scanning…

A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change…

强关联电子 · 物理学 2017-09-20 Jamie M. Booth , Daniel W. Drumm , Phil S. Casey , Jackson S. Smith , Salvy P. Russo

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…

强关联电子 · 物理学 2021-01-04 Byoung Hee Moon , Gang Hee Han , Miloš M. Radonjić , Hyunjin Ji , Vladimir Dobrosavljević

An intuitive interpretation of the relationship between the dispersion relation of the single-particle excitation in a metal and that of the spin excitation in a Mott insulator is presented, based on the results for the one- and…

强关联电子 · 物理学 2014-07-14 Masanori Kohno

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

强关联电子 · 物理学 2020-01-29 Yu-Liang Liu

The theory of first order density-driven phase transitions with frustration due to the long range Coulomb (LRC) interaction develop on paper I of this series is applied to the following physical systems: i) the low density electron gas ii)…

强关联电子 · 物理学 2016-08-31 J. Lorenzana , C. Castellani , C. Di Castro