中文
相关论文

相关论文: Electrochemical doping of few layer ZrNCl from fir…

200 篇论文

Unlike single layer graphene, in the case of $AB$-stacked bilayer graphene (BLG) one can induce a non-zero energy gap by breaking the inversion symmetry between the two layers using a perpendicular electric field. This is an essential…

介观与纳米尺度物理 · 物理学 2018-09-05 G. A. Nemnes , T. L. Mitran , A. Manolescu , Daniela Dragoman

We study the changes in the Fermi surface with electron doping in the LaFeAsO$_{1-x}$F$_x$ superconductors with density-functional supercell calculations using the linearized augmented planewave (LAPW) method. The supercell calculations…

材料科学 · 物理学 2009-11-13 P. Larson , S. Satpathy

We report density functional calculations of the electronic structure and Fermi surface of the BaFe$_2$As$_2$ and LiFeAs phases including doping via the virtual crystal approximation. The results show that contrary to a rigid band picture,…

超导电性 · 物理学 2008-09-19 D. J. Singh

We discuss doping dependencies of the electronic structure and Fermi surface of the monolayer Tl$_{2-x}$Cu$_x$Ba$_2$CuO$_{6+\delta}$ (Tl2201). The TlO bands are found to be particularly sensitive to doping in that these bands rapidly move…

强关联电子 · 物理学 2009-11-11 S. Sahrakorpi , Hsin Lin , R. S. Markiewicz , A. Bansil

The electronic structural properties in the presence of constrained magnetization and a charged background are studied for a monolayer of FeSe in non-magnetic, checkerboard-, and striped-antiferromagnetic (AFM) spin configurations. First…

超导电性 · 物理学 2013-02-12 Timur Bazhirov , Marvin L. Cohen

We investigate how field-effect doping affects the structural properties, the electronic structure and the Hall coefficient of few-layers transition metal dichalcogenides by using density-functional theory. We consider mono-, bi-, and…

介观与纳米尺度物理 · 物理学 2015-05-05 Thomas Brumme , Matteo Calandra , Francesco Mauri

By means of oxide molecular beam epitaxy with shutter-growth mode, we have fabricated a series of electron-doped (Sr1-xLax)2IrO4(001)(x = 0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigated the doping dependence of…

强关联电子 · 物理学 2015-04-27 M. Y. Li , Z. T. Liu , H. F. Yang , J. L. Zhao , Q. Yao , C. C. Fan , J. S. Liu , B. Gao , D. W. Shen , X. M. Xie

We study how the Fermi energy of a graphene monolayer separated from a conducting substrate by a dielectric spacer depends on the properties of the substrate and on an applied voltage. An analytical model is developed that describes the…

介观与纳米尺度物理 · 物理学 2013-02-21 Menno Bokdam , Petr A. Khomyakov , Geert Brocks , Paul J. Kelly

The proposal of using the field-effect for doping organic crystals has raised enormous interest. To assess the feasibility of such an approach, we investigate the effect of a strong electric field on the electronic structure of C60…

材料科学 · 物理学 2007-05-23 Erik Koch , Olle Gunnarsson , Samuel Wehrli , Manfred Sigrist

Recent experimental work has realized a new insulating state of samarium nickelate (SmNiO$_3$), accessible in a reversible manner via high-density electron doping. To elucidate this behavior, we use the first-principles density functional…

介观与纳米尺度物理 · 物理学 2019-11-27 Michele Kotiuga , Karin M. Rabe

Atomic intercalation in two dimensional (2D) layered materials can engineer the electronic structure at the atomic scale, bringing out tunable physical and chemical properties which are quite distinct in comparison with pristine one. Among…

强关联电子 · 物理学 2018-03-23 Zahir Muhammad , Kejun Mu , Haifeng Lv , Chuanqiang Wu , Zia ur Rehman , Muhammad Habib , Zhe Sun , Xiaojun Wu , Li Song

By using the density functional theory method, we systematically study the influences of the doping of an Al atom on the electronic structures of the Mg(0001) surface and dissociation behaviors of H2 molecules. We find that for the Al-doped…

化学物理 · 物理学 2015-05-14 Yanfang Li , Yu Yang , Yinghui Wei , Ping Zhang

Motivated by the recently proposed alternating single-layer trilayer stacking structure for the nickelate La$_3$Ni$_2$O$_7$, we comprehensively study this system using {\it ab initio} and random-phase approximation techniques. Our analysis…

超导电性 · 物理学 2024-08-15 Yang Zhang , Ling-Fang Lin , Adriana Moreo , Thomas A. Maier , Elbio Dagotto

Surface effects of a doped thin film made of a strongly correlated material are investigated both in the absence and presence of a perpendicular electric field. We use an inhomogeneous Gutzwiller approximation for a single band Hubbard…

强关联电子 · 物理学 2013-01-28 D. Nasr Esfahani , L. Covaci , F. M. Peeters

Recently, the superconductivity of bilayer nickelate La3Ni2O7 has been observed in the thin film at ambient pressure, facilitated by epitaxial strain. Here, we investigate the effects of film thickness and carrier doping on the electronic…

超导电性 · 物理学 2025-03-27 Haoliang Shi , Zihao Huo , Guanlin Li , Hao Ma , Tian Cui , Dao-Xin Yao , Defang Duan

Electron-doped cuprates require not only electron doping by chemical substitution but also post-growth reduction annealing for realizing superconductivity. However, electron concentration can also be varied by reduction annealing, making it…

超导电性 · 物理学 2026-04-29 M. Miyamoto , M. Horio , K. Moriya , A. Takahashi , K. Tanaka , Y. Koike , T. Adachi , I. Matsuda

Motivated by the technological relevance of S-doped few-layer graphene (FLG) in battery applications and in the oxygen reduction reaction, we systematically explore the effect of basal plane S-doping on the electronic properties of mono-,…

材料科学 · 物理学 2026-05-13 Armin Sahinovic , Rossitza Pentcheva

The electronic structure of electron-doped polycrystalline Mg$_{1-x}$Al$_{x}$(B$_{1-y}$C$_{y}$)$_2$ was examined by electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) and first-principle…

超导电性 · 物理学 2007-05-23 R. F. Klie , J. C. Zheng , Y. Zhu , A. J. Zambano , L. D. Cooley

WTe$_2$ is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monotonic changes in the electronic structure of WTe$_2$ upon…

Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities, which is, however, largely hindered by the lack of fundamental rules. In this Letter, for the first time, we develop a unified…

材料科学 · 物理学 2021-10-27 Xiaolan Yan , Pei Li , Su-Huai Wei , Bing Huang
‹ 上一页 1 2 3 10 下一页 ›