中文
相关论文

相关论文: Complementary memristive device based on a thin fi…

200 篇论文

Chemical vapor deposition (CVD) is a powerful method employed for high quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for…

Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the…

Semiconducting transition metal dichalcogenides (TMDCs) present new possibilities for designing novel electronic devices. An efficient contacting scheme is required to take advantage of exceptional opto-electronic properties of TMDCs in…

Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We…

介观与纳米尺度物理 · 物理学 2019-10-23 M. Grzeszczyk , M. R. Molas , K. Nogajewski , M. Bartoš , A. Bogucki , C. Faugeras , P. Kossacki , A. Babiński , M. Potemski

Molybdenum disulfide (MoS2) is a layered material of transition metal dichalcogenides (TMDCs) with a high refractive index in the visible and infrared spectral range. Therefore, by constructing MoS2 into dielectric nanoresonators, one can…

Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…

Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional…

There is growing interest in strongly correlated insulator thin films because the intricate interplay of their intrinsic and extrinsic state variables causes memristive behavior that might be used for bio-mimetic devices in the emerging…

The integration of transition metal dichalcogenides (TMDs) with ferroelectric substrates is a powerful strategy to modulate their electronic and optical properties. However, the use of relaxor ferroelectrics for this purpose remains…

材料科学 · 物理学 2025-05-06 D. Hernández-Pinilla , D. Cachago , Y. A. Xia , G. López-Polín , M. O Ramírez , L. E. Bausá

We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene…

介观与纳米尺度物理 · 物理学 2013-09-12 Hannu-Pekka Komsa , Arkady V. Krasheninnikov

Molybdenum disulfide (MoS$_2$) is a promising candidate for 2D nanoelectronic devices, that shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS$_2$ upon both compressive and tensile strains…

材料科学 · 物理学 2016-05-03 Miquel López-Suárez , Igor Neri , Riccardo Rurali

Hydrogel/inorganic composites have attracted attention in many applications, such as optoelectronic devices, biosensors, catalysis, and energy storage because of their capacity to increase and regulate optical and electronic features. In…

材料科学 · 物理学 2023-12-19 Bengu Ozugur Uysal , Onder Pekcan

The crystal structure of MoS$_2$ with strong covalent bonds in plane and weak Van der Waals interactions out of plane gives rise to interesting properties for applications such as solid lubrication, optoelectronics, and catalysis, which can…

材料科学 · 物理学 2021-07-28 Rijan Karkee , Enrique Guerrero , David A. Strubbe

In this work, we investigate the underlying physical mechanism for electric-field induced resistive switching in Au/MoS2/Au based memristive devices by combining reactive Molecular Dynamics (MD) and ab-initio quantum transport calculations.…

材料科学 · 物理学 2026-01-01 Ashutosh Krishna Amaram , Saurabh Kharwar , Tarun Kumar Agarwal

Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent…

介观与纳米尺度物理 · 物理学 2023-09-18 Sameer Kumar Mallik , Roshan Padhan , Suman Roy , Mousam Charan Sahu , Sandhyarani Sahoo , Satyaprakash Sahoo

Here, we propose an easy and robust strategy for the versatile preparation of hybrid plasmonic nanopores by means of controlled deposition of single flakes of MoS2 directly on top of metallic holes. The device is realized on silicon nitride…

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…

应用物理 · 物理学 2018-11-27 H. Nili , A. Vincent , M. Prezioso , M. R. Mahmoodi , I. Kataeva , D. Strukov

We demonstrate a new approach for dynamically manipulating the optical response of an atomically thin semiconductor, a monolayer of MoSe2, by suspending it over a metallic mirror. First, we show that suspended van der Waals heterostructures…

Molybdenum disulfide, $MoS_2$, is a next-generation semiconductor and is frequently integrated into emergent optoelectronic technologies based on two-dimensional materials. Here, we present a method that provides direct optical feedback on…

Digital holographic microscopy is a powerful tool for characterizing transparent and reflective phase objects. Its ability to reconstruct amplitude and phase can also offer great insight into wavefront shaping and design of all-dielectric…