相关论文: Direct bandgap silicon quantum dots achieved via e…
Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, forming hexagonal inclusions within the cubic crystal and…
The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant fields. This work examines the incorporation of He as a possible route to form a direct band gap in Si.…
We report the broadband (~ 25 nm) enhancement of radiative decay rate of colloidal quantum dots by exploiting the hyperbolic dispersion of a one-dimensional nonmagnetic metamaterial structure.
Silicon has long been the foundational semiconductor material for a broad range of electronic devices, owing to its numerous advantages: wide natural availability, ease of synthesis in both crystalline and amorphous forms, and relatively…
Coulomb correlations in the optical spectra of semiconductor quantum dots are investigated using a full-diagonalization approach. The resulting multi-exciton spectra are discussed in terms of the symmetry of the involved states.…
We argue that the experimentally easily accessible optical absorption spectrum can often be used to distinguish between a random alloy phase and a stoichiometrically equivalent core/shell realization of ensembles of monodisperse colloidal…
We consider a two-dimensional electron gas interacting with a quantized cavity mode. We find that the coupling between the electrons and the photons in the cavity enhances the superconducting gap. Crucially, all terms in the Peierls phase…
Embedded Si and Ge nanocrystals (NCs) in wide band-gap matrices are studied theoretically using an atomistic pseudopotential approach. From small clusters to large NCs containing on the order of several thousand atoms are considered.…
A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation…
In traditional approaches of obtaining quantized acoustoelectric current, a narrow channel is fabricated to form quantum dots, which hold a fixed number of electrons at a certain depth. We propose a natural way of forming quantum dots…
We present an electrostatic theory of band gap renormalization in atomically-thin semiconductors that captures the strong sensitivity to the surrounding dielectric environment. In particular, our theory aims to correct known band gaps, such…
It is widely accepted that the properties of most semiconductor nanocrystals can be tuned by their core size, shape and material. In covalent semiconductor nanocrystal materials, such as silicon, germanium or carbon, certain degree of…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport…
We propose the use of quantum dots formed in a semiconductor nanocolumn for the realization of charge or spin based quantum bits. The radial carrier confinement is achieved by employing conformal overgrowth, while multiple segmented gates…
We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native…
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…
We investigate elastic periodic structures characterized by topologically nontrivial bandgaps supporting backscattering suppressed edge waves. These edge waves are topologically protected and are obtained by breaking inversion symmetry…
Within the framework of adiabatic approximation, the energy levels and direct interband light absorption in a strongly prolated ellipsoidal quantum dot are studied. Analytical expressions for the particle energy spectrum and absorption…
The strong-coupling regime of cavity-quantum-electrodynamics (cQED) represents light-matter interaction at the fully quantum level. Adding a single photon shifts the resonance frequencies, a profound nonlinearity. cQED is a test-bed of…