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We study the response of several microwave resonators made from superconducting NbTiN thin-film meandering nanowires with large kinetic inductance, having different circuit topology and coupling to the transmission line. Reflection…

介观与纳米尺度物理 · 物理学 2024-06-18 Ermes Scarano , Elisabet K. Arvidsson , August K. Roos , Erik Holmgren , David B. Haviland

Dissipation dilution enables extremely low linear loss in stressed, high-aspect ratio nanomechanical resonators, such as strings or membranes. Here, we report on the observation and theoretical modelling of nonlinear dissipation in such…

应用物理 · 物理学 2021-05-05 Letizia Catalini , Massimiliano Rossi , Eric C. Langman , Albert Schliesser

Understanding mechanisms for energy dissipation from nanoparticles in contact with large samples is a central problem in describing friction microscopically. Calculation of the reduced density matrix appears to be the most suitable metho to…

凝聚态物理 · 物理学 2015-06-25 A. Ozpineci , D. M. Leitner , S. Ciraci

Strongly disordered superconductors (SDSCs) are widely used in qubits, microwave resonators, photon detectors, and other superconducting quantum devices. In SDSC-based devices, coherence times are limited by low-temperature microwave…

超导电性 · 物理学 2026-05-26 Anton V. Khvalyuk , Mikhail V. Feigel'man

The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third…

介观与纳米尺度物理 · 物理学 2014-03-13 Thomas Faust , Johannes Rieger , Maximilian J. Seitner , Jörg P. Kotthaus , Eva M. Weig

The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures.…

We systematically study the performance of compact lumped element planar microwave $\mathrm{Nb_{70}Ti_{30}N}$ (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up…

We measure the response and thermal motion of a high-Q nanomechanical oscillator coupled to a superconducting microwave cavity in the resolved-sideband regime where the oscillator's resonance frequency exceeds the cavity's linewidth. The…

量子物理 · 物理学 2008-11-06 J. D. Teufel , J. W. Harlow , C. A. Regal , K. W. Lehnert

We study the response of GaAs photonic crystal membrane resonators to thin film deposition. Slow spectral shifts of the cavity mode of several nanometers are observed at low temperatures, caused by cryo-gettering of background molecules.…

We study mechanical dissipation of the fundamental mode of millimeter-sized, high quality-factor ($Q$) metalized silicon nitride membranes at temperatures down to 14 mK using a three-dimensional optomechanical cavity. Below 200 mK, high-$Q$…

介观与纳米尺度物理 · 物理学 2016-01-12 Mingyun Yuan , Martijn A. Cohen , Gary Steele

Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study…

介观与纳米尺度物理 · 物理学 2019-07-04 Suman Sarkar , K. Lakshmi Ganapathi , Sangeneni Mohan , Aveek Bid

In this paper it is shown how the equivalent circuit parameters of a MEMS resonator can be simply obtained from an eigenfrequency simulation. Additionally, it is demonstrated that the Q-factor as a result of support losses in a MEMS…

介观与纳米尺度物理 · 物理学 2013-05-01 P. G. Steeneken , J. J. M. Ruigrok , S. Kang , J. T. M. van Beek , J. Bontemps , J. J. Koning

We investigate the influence of gold thin-films subsequently deposited on a set of initially bare, doubly clamped, high-stress silicon nitride string resonators at room temperature. Analytical expressions for resonance frequency, quality…

介观与纳米尺度物理 · 物理学 2014-11-25 Maximilian J. Seitner , Katrin Gajo , Eva M. Weig

Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are…

介观与纳米尺度物理 · 物理学 2016-06-06 Alejandro Molina-Sánchez , Maurizia Palummo , Andrea Marini , Ludger Wirtz

Atomically thin semiconductors such as monolayer MoS2 and WS2 exhibit nonlinear exciton-exciton annihilation at notably low excitation densities (below ~10 excitons/um2 in MoS2). Here, we show that the density threshold at which…

A comparative study of unloaded Q-factor measurements of a TE011 mode sapphire dielectric resonator with unloaded Q-factor value of 731,000 at a frequency of 10 GHz and temperature of 65 K using two best Q-factor measurement methods are…

仪器与探测器 · 物理学 2012-07-26 Kenneth Leong , Janina E. Mazierska , Mohan V. Jacob , Dimitri O. Ledenyov , S. Batt

On-chip actuation and readout of mechanical motion is key to characterize mechanical resonators and exploit them for new applications. We capacitively couple a silicon nitride membrane to an off resonant radio-frequency cavity formed by a…

介观与纳米尺度物理 · 物理学 2020-07-21 A. N. Pearson , K. E. Khosla , M. Mergenthaler , G. A. D. Briggs , E. A. Laird , N. Ares

The dissipative quantum dynamics of an anharmonic oscillator is investigated theoretically in the context of carbon-based nano-mechanical systems. In the short-time limit, it is known that macroscopic superposition states appear for such…

介观与纳米尺度物理 · 物理学 2013-05-30 Aurora Voje , Alexander Croy , Andreas Isacsson

We have prepared two kinds of Al resonators using thin films made by evaporation or sputtering and studied temperature behavior of their quality factors and resonance frequencies with the help of the extended Mattis-Bardeen (M-B) equations…

超导电性 · 物理学 2018-07-04 Takashi Noguchi , Agnes Dominjon , Yutaro Sekimoto

The high critical magnetic field and relatively high critical temperature of niobium nitride (NbN) make it a promising material candidate for applications in superconducting quantum technology. However, NbN-based devices and circuits are…