相关论文: High-performance bilayer metal-oxide thin film tra…
Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies tend to be the dominant type of defect in these materials but a fundamental…
In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility ({\mu}H) exceeding 100 cm2/Vs at room temperature (RT). It is found that the deposition of top hafnium oxide…
We have investigated the structural and magnetic properties of BiFeO$_3$ (BFO) thin films grown over (100)-oriented Si substrates by rf magnetron sputtering in a new route under O$_2$ free low pressure Ar atmosphere. Single-phase BFO films…
Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal…
Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics.…
Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and output power density. These bottlenecks can be circumvented…
We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The switching voltage depends strongly on the thickness of the…
Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the…
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material…
The unique electronic properties of amorphous indium gallium zinc oxide (a-IGZO) thin films are closely associated with the complex charge dynamics of the materials. Conventional studies of charge transport in a-IGZO usually involve…
Fabricating high-performance and/or high-density flexible electronics on plastic substrates is often limited by the poor dimensional stability of polymer substrates. This can be mitigated by using glass carriers during fabrication, but…
High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses were grown on (001)-oriented LSAT substrates by pulsed electron-beam deposition technique. Thick SVO films (~25 nm) exhibited metallic behavior with the electrical…
Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs…
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…
This work reports the fabrication and characterization of high-quality tungsten-doped vanadium dioxide (WxV1-xO2, x = 0~3 at. %) by thermal oxidation of sputtered tungsten-vanadium alloyed thin films with different atomic percentages and…
Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO…
In this study, direct-current reactive sputtered ZnO and ZnO1-x based thin film (30 nm and 300 nm in thickness) memristor devices were produced and the effects of oxygen vacancies and thickness on the memristive characteristics were…
The magneto-optical activity of high quality transparent thin films of insulating EuTiO3 (ETO) deposited on a thin SrTiO3 (STO) substrate with both being non-magnetic materials are demonstrated to be a versatile tool for light modulation.…
Exchange bias (EB) shifts are commonly reported for the ferromagnetic (FM)/antiferromagnetic (AFM) bilayer systems. While stoichiometric ordered Sm$_{2}$NiMnO$_{6}$ (SNMO) and BaTiO$_{3}$ (BTO) are known to possesses FM and diamagnetic…
Two-dimensional (2D) transition-metal oxide perovskites greatly expand the field of available 2D multifunctional material systems. Here, based on density functional theory calculations, we predicted the presence of ferromagnetism orders…