相关论文: Local magnetoresistance in Fe/MgO/Si lateral spin …

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\Delta}RNL) of 130 {\Omega} is observed at room temperature, which is the largest value observed in…

We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…

We have determined the magnetoresistance of RuO_2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger…

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…

Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show…

Although the electrical injection, transport and detection of spins in silicon have been achieved, the induced spin accumulation was much smaller than expected and desired, limiting the potential impact of Si-based spintronic devices. Here,…

In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245…

Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables…

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…

We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle…

We show that ac magnetoresistance at room temperature in La0.7Sr0.3MnO3 is extremely high (= 47% in H = 100 mT, f = 3-5 MHz), and magnetic field dependence of reactance exhibits a double peak behavior. However, magnitudes of the ac…

The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…

Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance can be chosen independently between the injection and…

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these…

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…

Conventional spin Hall nano-oscillators (SHNOs) face fundamental power limitations due to the low anisotropic magnetoresistance (AMR < 0.3%) of ferromagnetic layers. To address this, we developed a synthetic antiferromagnetic spin-valve…

We use a previously proposed theory for the temperature dependence of tunneling magnetoresistance to shed light on ongoing efforts to optimize spin valves. First we show that a mechanism in which spin valve performance at finite…

We report magnetotransport measurements on high purity sintered samples of spintronic CrO2 in an unexplored crystallographic regime between 5-300 K. The negative magnetoresistance (MR) as derived from RH isotherms is observed to be…