中文
相关论文

相关论文: Electronic and Thermoelectric Properties of Few-La…

200 篇论文

In this work, we report an ab initio investigation based on density functional theory of the structural, energetic and electronic properties of 2D layered chalcogenides compounds based in the combination of the transition-metals (Ti, Zr,…

材料科学 · 物理学 2019-04-17 Carlos M. O. Bastos , Rafael Besse , Juarez L. F. Da Silva , Guilherme M. Sipahi

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…

强关联电子 · 物理学 2021-01-04 Byoung Hee Moon , Gang Hee Han , Miloš M. Radonjić , Hyunjin Ji , Vladimir Dobrosavljević

In the field of 2D materials, transition metal dichalcogenides (TMDs) are gaining attention for electronic applications. Our study delves into the H-phase monolayer VS$_2$ of the TMD family, analyzing its electronic structure and how strain…

材料科学 · 物理学 2024-01-18 Oguzhan Orhan , Şener Özönder , Soner Ozgen

Out-of-plane and in-plane electric polarization, which rarely coexist in a two-dimensional (2D) ferroelectric material, offer different advantages in ferroelectricity-based devices. Here, we report the coexistence of in-plane and…

材料科学 · 物理学 2026-03-24 A. D. Molchanova , L. H. Yin , L. P. Gao , W. H. Song , Y. P. Sun , K. R. Allahverdiyev , M. N. Popova

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We…

介观与纳米尺度物理 · 物理学 2018-11-14 Jean Choukroun , Marco Pala , Shiang Fang , Efthimios Kaxiras , Philippe Dollfus

Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be…

Strain-engineered transition-metal dichalcogenide nanobubbles are promising platforms for quantum emission, as revealed by recent experimental observations. In this work, we present an \textit{ab initio} investigation of MoS$_2$, WS$_2$,…

介观与纳米尺度物理 · 物理学 2026-02-25 Stefan Velja , Alexander Steinhoff , Jannis Krumland , Christopher Gies , Caterina Cocchi

Molybdenum ditelluride, MoTe2, is a versatile material where the topological phase can be readily tuned by manipulating the associated structural phase transition. The fine details of the band structure of MoTe2, key to understanding its…

We show room temperature valley coherence with in MoS2, MoSe2, WS2 and WSe2 monolayers using linear polarization resolved hot photoluminescence (PL), at energies close to the excitation - demonstrating preservation of valley coherence…

介观与纳米尺度物理 · 物理学 2016-05-24 Sangeeth Kallatt , Govindarao Umesh , Kausik Majumdar

In this work, we have presented a first principle simulation study on the electronic properties of MoS2/MX2/MoS2 (M=Mo or W; X=S or Se) trilayer heterostrcuture. We have investigated the effect of stacking configuration, bi-axial…

计算物理 · 物理学 2018-02-27 Kanak Datta , Quazi D. M. Khosru

We investigated the thermoelectric properties of the 2D monolayer of WX2N4 using Density Functional Theory combined with Boltzmann Transport Equation. We obtained an outstanding thermoelectric figure of merit of 0.91 at 400K for p-type…

材料科学 · 物理学 2023-04-03 Chayan Das , Dibyajyoti Saikia , Atanu Betal , Satyajit Sahu

We describe here a theory of a quantum dot in an electrically tunable MoSe$_2$/WSe$_2$ heterostructure. Van der Waals heterostructures allow for tuning their electronic properties beyond their monolayer counterparts. We start by determining…

介观与纳米尺度物理 · 物理学 2024-12-23 Katarzyna Sadecka , Maciej Bieniek , Paulo E. Faria Junior , Arkadiusz Wójs , Paweł Hawrylak , Jarosław Pawłowski

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…

Two-dimensional transition metal dichalcogenides (TMD) offer a unique platform for creating van-der-Waals heterojunctions with fascinating physical properties and promising applications in optoelectronics and valleytronics. Because of their…

材料科学 · 物理学 2023-05-09 J. E. Zimmermann , M. Axt , F. Mooshammer , P. Nagler , C. Schüller , T. Korn , U. Höfer , G. Mette

Semiconducting transition metal dichalcogenides (TMDs) are desired as active materials in optoelectronic devices due to their strong excitonic effects. They can be exfoliated from their parent layered materials with low-cost and for mass…

We present a density functional theory parametrized hybrid k$\cdot$p tight binding model for electronic properties of atomically thin films of transition-metal dichalcogenides, 2H-$MX_2$ ($M$=Mo, W; $X$=S, Se). We use this model to analyze…

介观与纳米尺度物理 · 物理学 2018-08-07 David A. Ruiz-Tijerina , Mark Danovich , Celal Yelgel , Viktor Zólyomi , Vladimir I. Fal'ko

First-principle calculations with different exchange-correlation functionals, including LDA, PBE and vdW-DF functional in form of optB88-vdW, have been performed to investigate the electronic and elastic properties of two dimensional…

材料科学 · 物理学 2015-08-31 Fan Zeng , Wei-Bing Zhang , Bi-Yu Tang

Monolayers (MLs) of transition metal dichalcogenides (TMDs) exhibit unusual electrical behavior under magnetic fields due to their intrinsic spin-orbit coupling and lack of inversion symmetry. While recent experiments have also identified…

The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the…

介观与纳米尺度物理 · 物理学 2021-04-30 M. Masseroni , T. Davatz , R. Pisoni , F. K. de Vries , P. Rickhaus , T. Taniguchi , K. Watanabe , V. Fal'ko , T. Ihn , K. Ensslin

Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2…

材料科学 · 物理学 2023-10-16 S. Gupta , R. Ohshima , Y. Ando , T. Endo , Y. Miyata , M. Shiraishi