相关论文: Valley filter from magneto-tunneling between singl…
When a single-layer graphene sheet is contacted with metallic electrodes, tunnel barriers are formed as a result of the doping of graphene by the metal in the contact region. If the Fermi energy level is modulated by a gate voltage, the…
Graphene/(Poly)vinyl alcohol (PVA) composite film with thickness $60 \mu m$ were synthesized by solidification of a PVA solution comprising of dispersed graphene nanosheets. The close proximity of the graphene sheets enables the fluctuation…
The effective theory for bilayer graphene (BLG), subject to parallel/in-plane magnetic fields, is derived. With a sizable magnetic field the trigonal warping becomes irrelevant, and one ends up with two Dirac points in the vicinity of each…
Introducing quantum confinement has uncovered a rich set of interesting quantum phenomena and allows one to directly probe the physics of confined (quasi-)particles. In most experiments, however, electrostatic potential is the only…
Interlayer sliding, together with twist angle, is a crucial parameter that defines the atomic registry and thus determines the properties of two-dimensional (2D) material homobilayers. Here, we theoretically demonstrate that controlled…
Based on the quantum master equation approach, the nonlinear electric conductivity of graphene is investigated under static electric fields for various chemical potential shifts. The simulation results show that, as the field strength…
Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies…
Carrier interactions on graphene are studied. The study shows that besides the well known Coulomb repulsion between carriers, there also exist four-fermion interactions associated with U-process, one of which attracts carriers in different…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
We calculate the conductance G of a bipolar junction in a graphene nanoribbon, in the high-magnetic field regime where the Hall conductance in the p-doped and n-doped regions is 2e^2/h. In the absence of intervalley scattering, the result…
When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the…
The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the two-dimensional electronic states of the graphene (2D-2D tunneling) is…
We study ballistic transport of Dirac electrons through a strip in silicene, when the strip is exposed to off-resonant circularly polarized light and an electric field applied perpendicular to the silicene plane. We show that the…
In two-dimensional materials where interacting Fermi pockets occur in valleys related by time-reversal symmetry, a spontaneous valley imbalance results in a novel state known as an orbital magnet. Due to the breaking of time-reversal…
We have analyzed theoretically the effect of a laser on the tunneling current through a double barrier in the presence of a parallel magnetic field. The mag netotunneling current is modified by the light due to the photon emission and…
A large set of recent experiments has been exploring topological transport in bosonic systems, e.g. of photons or phonons. In the vast majority, time-reversal symmetry is preserved, and band structures are engineered by a suitable choice of…
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely…
We study the states localized near an interface between conducting and insulating bilayer graphene (BLG) and show that they have highly unusual properties that have no analog in conventional systems. Moreover, the states belonging to the…
Bilayer graphene subjected to perpendicular magnetic and electric fields displays a subtle competition between different symmetry broken phases, resulting from an interplay between the internal spin and valley degrees of freedom. The…