相关论文: Bilayer graphene Hall bar with a pn-junction
We propose a model of spin-polarized-current state for electrons in bilayer graphene. The model resolves the puzzles as revealed by experiments that (a) the energy gap $E_{\rm gap}$ of the insulating ground state at the charge neutrality…
The electromagnetic response of bilayer graphene in a magnetic field is studied in comparison with that of monolayer graphene. Both types of graphene turn out to be qualitatively quite similar in dielectric and screening characteristics,…
We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional…
The Hall resistance of a homogeneous electron system is well known to be anti-symmetric with respect to the magnetic field and the sign of charge carriers. We have observed that such symmetries no longer hold in planar hybrid structures…
We extensively investigate the electronic and transport properties of a twisted bilayer graphene when subjected to both an external perpendicular electric field and a magnetic field. Using a basic tight-binding model, we show the flat…
Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the…
A massive quantum particle on a two-dimensional curved surface experiences a surface-geometry induced attractive potential that is characterized by the radii of curvature at a given point. With bilayer graphene sheets and carbon…
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual…
Manipulating electron quantum 1D channels is an important element in the field of quantum information due to their ballistic and phase coherence properties. In GaAs and graphene based two dimensional gas systems, these edge channels have…
The rich phase diagram of quantum spin-ladder systems has attracted much attention in the theoretical literature. The progress in experimental realisations of this fascinating physics however has been much slower. While materials with a…
We study the edge magnetization of bilayer graphene ribbons with zigzag edges. The presence of flat edge-state bands at the Fermi energy of undoped bilayer, which gives rise to a strong peak in the density of states, makes bilayer ribbons…
We show that the strong coupling of pseudospin orientation and charge carrier motion in bilayer graphene has a drastic effect on transport properties of ballistic p-n-p junctions. Electronic states with zero momentum parallel to the barrier…
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…
We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…
The tight-binding model of electrons in graphene is reviewed. We derive low-energy Hamiltonians supporting massless Dirac-like chiral fermions and massive chiral fermions in monolayer and bilayer graphene, respectively, and we describe how…
The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…
We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and…
The band structures of strained graphene nanoribbons (GNRs) are examined by a tight binding Hamiltonian that is directly related to the type and strength of strains. Compared to the two-dimensional graphene whose band gap remains close to…
Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The…
We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular…