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相关论文: Transient Carrier Dynamics in a Mott Insulator wit…

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The mechanism underlying charge transport in strongly correlated quantum systems, such as doped antiferromagnetic Mott insulators, remains poorly understood. Here we study the expansion dynamics of an initially localized hole inside a…

量子气体 · 物理学 2022-07-13 Lauritz Hahn , Annabelle Bohrdt , Fabian Grusdt

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

Charge dynamics of (Ti1-xVx)2O3 with x=0-0.06 has been investigated by measurements of charge transport and optical conductivity spectra in a wide temperature range of 2-600K with the focus on the thermally and doping induced…

强关联电子 · 物理学 2009-11-13 M. Uchida , J. Fujioka , Y. Onose , Y. Tokura

The insulator/metal transition induced by hole-doping due to neodymium vacancies of the Mott- Hubbard antiferromagnetic insulator, Nd1-xTiO3, is studied over the composition range 0.010(6) < x < 0.243(10). Insulating p-types conduction is…

强关联电子 · 物理学 2009-11-11 A. S. Sefat , J. E. Greedan , G. M. Luke , M. Niewczas , J. D. Garrett , H. Dabkowska , A. Dabkowski

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

We study the effects of hole doping on the two-dimensional Heisenberg-Kondo model around the quantum critical point, where the spin liquid phase (Kondo insulator) and the magnetically ordered phase are separated via a second-order phase…

强关联电子 · 物理学 2009-11-10 Y. Saito , A. Koga , N. Kawakami

The dispersion relation of a doped hole in the half-filled 2D Hubbard model is shown to follow a k^4 law around the (0,pi) and (pi,0) points in the Brillouin zone. Upon addition of pair-hopping processes this dispersion relation is unstable…

强关联电子 · 物理学 2007-05-23 F. F. Assaad , M. Imada

We study the double occupancy in a fermionic Mott insulator at half-filling generated via a dynamical periodic modulation of the hopping amplitude. Tuning the modulation amplitude, we describe a crossover in the nature of doublon-holon…

量子气体 · 物理学 2010-06-02 Fabian Hassler , Andreas Rüegg , Manfred Sigrist , Gianni Blatter

I introduce a doped two-dimensional quantum dimer model describing a doped Mott insulator and retaining the original Fermi statistics of the electrons. This model shows a rich phase diagram including a d-wave hole-pair unconventional…

强关联电子 · 物理学 2008-04-24 Didier Poilblanc

Within the framework of kinetic-energy-driven superconductivity, the asymmetric doping dependence of superconductivity between the hole- and electron-doped triangular-lattice superconductors has been studied. It is shown that although the…

超导电性 · 物理学 2018-05-09 Yu Lan , Xixiao Ma , Ling Qin , Yongjun Wang , Shiping Feng

The electric resistivity is examined in the constrained Hilbert space of a doped Mott insulator, which is dictated by a non-Ioffe-Larkin composition rule due to the underlying mutual Chern-Simons topological gauge structure. In the…

强关联电子 · 物理学 2025-04-23 Chuan Chen , Jia-Xin Zhang , Zhi-Jian Song , Zheng-Yu Weng

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

强关联电子 · 物理学 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

Surprising properties of doped Mott insulators are at the heart of many quantum materials, including transition metal oxides and organic materials. The key to unraveling complex phenomena observed in these systems lies in understanding the…

强关联电子 · 物理学 2018-12-05 Fabian Grusdt , Zheng Zhu , Tao Shi , Eugene Demler

We introduce a new technique to probe the properties of an interacting cold atomic gas that can be viewed as a dynamical compressibility measurement. We apply this technique to the study of the superfluid to Mott insulator quantum phase…

其他凝聚态物理 · 物理学 2009-11-13 H. Lignier , A. Zenesini , D. Ciampini , O. Morsch , E. Arimondo , S. Montangero , G. Pupillo , R. Fazio

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

Unveiling the nature of the pseudogap and its relation to both superconductivity and antiferromagnetic Mott insulators, the pairing mechanism, and a non-Fermi liquid phase is a key issue for understanding high temperature superconductivity…

超导电性 · 物理学 2013-02-14 Takashi Uchino

The paradigmatic Mott insulator arises in strongly correlated systems, where strong local repulsion localizes interacting particles in underlying egg-holder-like potential. The corresponding Mott transition reflects delocalization of the…

超导电性 · 物理学 2020-05-28 Andreas Glatz , Valerii Vinokur

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for…