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相关论文: Transient Carrier Dynamics in a Mott Insulator wit…

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We study the evolution of the optical conductivity in the t-J model with temperature and doping using the Extended Dynamical Cluster Approximation. The cluster approach results in an optical mass which is doping independent near half…

强关联电子 · 物理学 2009-11-11 Kristjan Haule , Gabriel Kotliar

We attempt to access the regime of strong coupling between charge carriers and transverse dynamics of an isolated conducting ``stripe'', such as those found in cuprate superconductors. A stripe is modeled as a partially doped domain wall in…

强关联电子 · 物理学 2007-05-23 Oleg Tchernyshyov , Leonid P. Pryadko

The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit…

强关联电子 · 物理学 2015-06-11 Satoshi Okamoto

This article reviews the effort to understand the physics of high temperature superconductors from the point of view of doping a Mott insulator. The basic electronic structure of the cuprates is reviewed, emphasizing the physics of strong…

强关联电子 · 物理学 2009-09-29 Patrick A. Lee , Naoto Nagaosa , Xiao-Gang Wen

High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…

强关联电子 · 物理学 2016-07-05 L. Fratino , P. Sémon , G. Sordi , A. -M. S. Tremblay

Twenty seven years after the discovery of high-temperature superconductivity \cite{BedMu}, consensus on its theoretical explanation is still absent. To a good extent, this is due to the difficulty of studying strongly correlated systems…

超导电性 · 物理学 2014-12-08 Hadi Ebrahimnejad , George A. Sawatzky , Mona Berciu

We study the hole and magnon spectral functions as a function of hole doping in the two-dimensional (2D) t-J and t-t'-t"-J models working within the limits of the spin-wave theory, by linearizing the hole-spin-deviation interaction and by…

强关联电子 · 物理学 2015-05-28 Satyaki Kar , Efstratios Manousakis

In the generalized-tJ model the effect of the large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro , Xiao-Gang Wen

Cluster dynamical mean field calculations based on 2, 4, 8 and 16 site clusters are used to analyze the doping-driven metal-insulator transition in the two dimensional Hubbard model. Comparison of results obtained on different clusters…

强关联电子 · 物理学 2010-10-04 Emanuel Gull , Michel Ferrero , Olivier Parcollet , Antoine Georges , Andrew J. Millis

Dynamically driven interacting quantum many-body systems have the potential to exhibit properties that defy the laws of equilibrium statistical mechanics. A widely studied model is the impulsively driven antiferromagnetic Mott insulator,…

Considering a system of ultracold atoms in an optical lattice, we propose a simple and robust implementation of a quantum simulator for the homogeneous t-J model with a well-controlled fraction of holes x. The proposed experiment can…

量子气体 · 物理学 2010-07-19 Andre Eckardt , Maciej Lewenstein

The possibility of suddenly ionized molecules undergoing extremely fast electron hole dynamics prior to significant structural change was first recognized more than 20 years ago and termed charge migration. The accurate probing of ultrafast…

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro

We investigated the infrared optical spectra of an organic dimer Mott insulator $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, which was irradiated with X-rays. We observed that the irradiation caused a large spectral weight transfer from the…

强关联电子 · 物理学 2009-11-13 T. Sasaki , N. Yoneyama , Y. Nakamura , N. Kobayashi , Y. Ikemoto , T. Moriwaki , H. Kimura

We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical endpoint…

强关联电子 · 物理学 2015-06-02 B. Hartmann , D. Zielke , J. Polzin , T. Sasaki , J. Müller

Mott insulator superconductor transition, via pressure and no external doping, is studied in orbitally non degenerate spin-\half systems. It is presented as another RVB route to high \tc superconductivity. We propose a `strong coupling'…

强关联电子 · 物理学 2009-11-07 G. Baskaran

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping…

We show that antiferromagnetic spin-density wave order in the two-dimensional Hubbard model yields a drop of the charge carrier density as observed in recent transport measurements for cuprate superconductors in high magnetic fields upon…

强关联电子 · 物理学 2020-05-01 Pietro M. Bonetti , Johannes Mitscherling , Demetrio Vilardi , Walter Metzner

The two-layer square lattice quantum antiferromagnet with spins 1/2 shows a magnetic order-disorder transition at a critical ratio of the interplane to intraplane couplings. We investigate the dynamics of a single hole in a bilayer…

强关联电子 · 物理学 2009-10-31 Matthias Vojta , Klaus W. Becker

The dynamics and internal structure of doping fronts in organic semiconductors are investigated theoretically using an extended drift-diffusion model for ions, electrons and holes. The model also involves the injection barriers for…

材料科学 · 物理学 2012-09-14 M. Modestov , V. Bychkov , D. Valiev , M. Marklund