相关论文: Spin Orbit Interaction and Isotropic Electronic Tr…

We present a theoretical study of spin polarized transport in Fe atomic contacts using a self-consistent tight-binding Hamiltonian in a non-orthogonal $s$, $p$ and $d$ basis set, the spin-polarization being obtained from a non-collinear…

In a clean Fermi liquid, due to spin up/spin down symmetry, the dc spin current driven by a magnetic field gradient is finite even in the absence of impurities. Hence, the spin conductivity sigma_s assumes a well-defined collision-dominated…

We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first…

We address the problem of spin-resolved scattering through spin-orbit nanostructures in graphene, i.e., regions of inhomogeneous spin-orbit coupling on the nanometer scale. We discuss the phenomenon of spin-double refraction and its…

We consider a gated one-dimensional (1D) quantum wire disturbed in a contactless manner by an alternating electric field produced by a tip of a scanning probe microscope. In this schematic 1D electrons are driven not by a pulling electric…

We investigate the transport properties of a graphene layer in the presence of Rashba spin-orbit interaction. Quite generally, spin-orbit interactions induce spin splittings and modifications of the graphene bandstructure. We calculate…

This work examines the effect of disclinations on the scattering of quasipaticles in graphene with the presence of a topological defect. Using the tight-binding method, the electronic properties of graphene with disclination are described,…

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier…

In this chapter we review the quantitative and qualitative aspects of describing the properties of magnetic solids on the basis of electronic Hamiltonian. We show that a spin Hamiltonian approach becomes consistent with an electronic…

We study the correlated ground states of twisted mono-bilayer graphene with and without proximity-induced spin-orbit coupling (SOC) from a transition-metal dichalcogenide layer placed on top. We perform self-consistent Hartree-Fock…

Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even…

We present direct imaging measurements of charge transport across a 1 cm$\times$ 1 cm$\times$ 4 mm crystal of high purity silicon ($\sim$20 k$\Omega$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the…

Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's…

We consider a two dimensional semiconductor with carriers subject to spin-orbit interactions and scattered by randomly distributed magnetic impurities. We solve the time-dependent Schroedinger equation to investigate the relationship…

We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…

We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate…

Electronic, transport, and spin properties of grain boundaries (GBs) are investigated in electrostatically doped graphene at finite electron densities within the Hartree and Hubbard approximations. We demonstrate that depending on the…

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto…

Intervalley charged-impurity scattering processes are examined. It is found that the scattering probability is enhanced due to the Coulomb interaction with the impurity by the Sommerfield factor $F_Z\propto \epsilon^{2\sqrt{1-4g^2}-2}$,…