相关论文: Interface-induced magnetism in perovskite quantum …
Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown by pulsed laser deposition on (110) oriented DyScO3 (DSO) substrates with various film thickness t (2 nm < t < 50 nm). All the films were produced with stoichiometric…
By combining dielectric, specific heat, and magnetization measurements and high-resolution neutron powder diffraction, we have investigated the thermodynamic and magnetic/structural properties of the metastable orthorhombic perovskite…
Diverse phenomena emerge at the interface between band insulators LaAlO3 and SrTiO3, such as superconductivity and ferromagnetism, showing an opportunity for potential applications as well as bringing fundamental research interests.…
SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic…
We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for…
The electronic and magnetic properties in ABO3 perovskite oxides are extremely sensitive to lattice structure but also the dimensionality, such as the thickness in thin film form. Here, we report the thickness-dependent electro-magnetic…
Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit…
Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin…
We have measured the planar Hall effect in epitaxial thin films of the itinerant ferromagnet SrRuO3 patterned with their current paths at different angles relative to the crystallographic axes. Based on the results, we have determined that…
Mn-doped SrTiO_3.0, when synthesized free of impurities, is a paramagnetic insulator with interesting dielectric properties. Since delocalized charge carriers are known to promote ferromagnetism in a large number of systems via diverse…
Strong Coulomb repulsion and spin-orbit coupling are known to give rise to exotic physical phenomena in transition metal oxides. Initial attempts to investigate systems where both of these fundamental interactions are comparably strong,…
The magnetoresistance (MR) of SrTiO$_3$ is theoretically investigated based on the Boltzmann equation by considering its detailed band structure. The formula for MR proposed by Mackey and Sybert is extended to be applicable to a system with…
When a topological insulator (TI) is in contact with a ferromagnet, both time reversal and inversion symmetries are broken at the interface. An energy gap is formed at the TI surface, and its electrons gain a net magnetic moment through…
We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi…
The longitudinal resistance $R_{xx}$ of the SrTiO3/LaAlO3 interface with magnetic fields applied perpendicular to the interface has an antisymmetric term (namely, $R_{xx}(H)\neq R_{xx}(-H)$) which increases with decreasing temperature and…
We report on the resonant tunneling effect and the increase of tunneling magnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAs quantum-well heterostructures. The observed quantum levels of the GaMnAs quantum well were…
We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is…
Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk…
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility \mu=1.9 x 10^5 cm^2/Vs at density n=1.45 x…
We observe an unusual behavior of the spin Hall magnetoresistance (SMR) measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, which is a tensile-strained LaCoO3 (LCO) thin film with the Curie temperature Tc=85K. The SMR…