相关论文: Low dimensionality of the diamond surface conducti…
Surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions are summarized. The formation of a conductive layer at the surface of diamond is discussed based on Hall effect,…
Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical…
Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, surface roughness, non-polar optical phonons, and acoustic…
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively…
We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A…
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$…
We have studied electron transport in clean single-walled carbon nanotube quantum dots. Because of the large number of Coulomb blockade diamonds simultaneously showing both shell structure and Kondo effect, we are able to perform a detailed…
A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…
Two novel properties, unique for semiconductors: a negative electron affinity [1-2], and a high p-type surface electrical conductivity [3-4], were discovered in diamond at the end of the last century. Both properties appear when the diamond…
We report magnetoresistance measurements of hydrogen-terminated (100)-oriented diamond surfaces where hole carriers are accumulated using an ionic-liquid-gated field-effect-transistor technique. Unexpectedly, the observed magnetoresistance…
In this letter, we report the effects of irradiating hydrogen-terminated diamond surfaces with protons. We study the electrical behavior of the two-dimensional hole gas that forms on the diamond surface as a result of hydrogen-termination.…
The observation of strong and tunable spin-orbit interaction (SOI) in surface conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a comprehensive method to analyze the magnetotransport behavior…
In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $\Delta$. But transport experiments usually exhibit a much smaller activation energy at low…
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…
We are honored to dedicate this article to Emmanuel Rashba on the occasion of his 95 birthday. In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap,…
Ultra-wide bandgap and the absence of shallow dopants are the major challenges in realizing diamond based electronics. However, the surface functionalization offers an excellent alternative to tune electronic structure of diamonds. Herein,…
An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated…
Two-dimensional (2D) diamond has aroused tremendous interest in nanoelectronics and optoelectronics, owing to its superior properties and flexible characteristics compared to bulk diamond. Despite significant efforts, great challenges lie…
We fabricated a gated-vertical (In,Ga)As quantum dot with an Al2O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dI/dV-V…
By using density functional theory, we have studied vibrational features, Raman activities, and electronic properties of ultrathin hydrogen-passivated diamond nanowires (H-DNWs). Confinement imposes the softening of transverse acoustic…