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Graphene, a two-dimensional (2D) material with unique electronic properties, appears to be an ideal object for the application of surface-science methods. Among them, a family of scanning probe microscopy methods (STM, AFM, KPFM) and the…

材料科学 · 物理学 2015-03-30 Yuriy Dedkov , Elena Voloshina , Mikhail Fonin

The unique properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple…

材料科学 · 物理学 2018-04-27 Otakar Frank , Mildred S. Dresselhaus , Martin Kalbac

The interaction between graphene and hexagonal boron nitride (hBN) plays a pivotal role in determining the electronic and structural properties of graphene-based devices. In this work, we employ quantum Monte Carlo (QMC) to study the…

Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are…

Over the past decade, graphene has emerged as a promising candidate for exploring the viscous nature of electronic flow facilitated by the availability of extremely high-quality devices employing a graphene channel encapsulated within…

介观与纳米尺度物理 · 物理学 2025-11-20 Akash Gugnani , Aniket Majumdar , Kenji Watanabe , Takashi Taniguchi , Arindam Ghosh

We report on the detection and charge distribution analysis for nitrogen substitutional dopants in single layer graphene membranes by aberration-corrected high-resolution transmission electron microscopy (HRTEM). Further, we show that the…

Using first-principles techniques, we calculate the renormalization of the electron Fermi velocity and the vibrational lifetimes arising from electron-phonon interactions in doped bilayer graphene and in graphite and compare the results…

材料科学 · 物理学 2008-12-23 Cheol-Hwan Park , Feliciano Giustino , Marvin L. Cohen , Steven G. Louie

The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…

An experimental study of Raman scattering in N-layer graphene as a function of the top layer doping is reported. At high doping level, achieved by a CHF_3 plasma treatment, we observe a splitting of the $G$ band in the spectra of bilayer…

介观与纳米尺度物理 · 物理学 2010-03-23 M. Bruna , S. Borini

Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive.…

Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the…

We examine the competition between adhesive and bending energies for few-layered graphene samples placed on rigid, microscale-corrugated substrates. Using atomic force microscopy, we show that the graphene undergoes a sharp "snap-through"…

介观与纳米尺度物理 · 物理学 2015-05-30 Scott Scharfenberg , Nikhita Mansukhani , Cesar Chialvo , Richard L. Weaver , Nadya Mason

Vertically stacked two-dimensional (2D) van der Waals (vdW) heterostructures based on graphene electrodes represent a promising architecture for next-generation electronic devices. However, their first-principles characterizations have been…

介观与纳米尺度物理 · 物理学 2024-03-29 Tae Hyung Kim , Juho Lee , Ryong-Gyu Lee , Yong-Hoon Kim

We derive electronic structure models for weakly interacting bilayers such as graphene-graphene and graphene-hexagonal boron nitride, based on density functional theory calculations followed by Wannier transformation of electronic states.…

介观与纳米尺度物理 · 物理学 2016-06-28 Shiang Fang , Efthimios Kaxiras

Raman spectroscopy is a fast, non-destructive means to characterize graphene samples. In particular, the Raman spectra show a significant dependence on doping. While the change in position and width of the G peak can be explained by the…

材料科学 · 物理学 2015-05-13 D. M. Basko , S. Piscanec , A. C. Ferrari

In this article, we have theoretically investigated the performance of graphene-hexagonal Boron Nitride hyper crystals to demonstrate all angle negative refraction.Hexagonal Boron Nitride, the latest natural hyperbolic material; can be a…

Van der Waals structures present a unique opportunity for tailoring material interfaces and integrating photonic functionalities. By precisely manipulating the twist angle and stacking sequences, it is possible to elegantly tune and…

介观与纳米尺度物理 · 物理学 2023-07-21 Song Li , Anton Pershin , Pei Li , Adam Gali

Graphene and some graphene like two dimensional materials; hexagonal boron nitride (hBN) and silicene have unique mechanical properties which severely limit the suitability of conventional theories used for common brittle and ductile…

材料科学 · 物理学 2017-04-11 Tawfiqur Rakib , Satyajit Mojumder , Sourav Das , Sourav Saha , Mohammad Motalab

Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy…

Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this…