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The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in…

The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser…

Recent discovery of a novel hexagonal phase of GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity of bulk phase even higher than graphite while its monolayer is a…

材料科学 · 物理学 2022-10-19 Changmeng Huan , Pu Wang , Bingtao Liu , Binghan He , Yongqing Cai , Qingqing Ke

We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create…

介观与纳米尺度物理 · 物理学 2016-06-29 Hatef Sadeghi , Sara Sangtarash , Colin Lambert

Effects of interaction of graphene with electron donor and acceptor molecules have been investigated by employing Raman spectroscopy. The G band softens progressively with the increasing concentration of tetrathiafulvalene (TTF) which is an…

材料科学 · 物理学 2008-08-26 Rakesh Voggu , Barun Das , Chandra Sekhar Rout , C. N. R. Rao

Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its…

应用物理 · 物理学 2019-11-12 Jerome A. Cuenca , Soumen Mandal , Malcolm Snowball , Adrian Porch , Oliver A. Williams

We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density.…

介观与纳米尺度物理 · 物理学 2023-02-15 Jens Sonntag , Kenji Watanabe , Takashi Taniguchi , Bernd Beschoten , Christoph Stampfer

The electron band structure of graphene on SrTiO3 substrate has been investigated as a function of temperature. The high-resolution angle-resolved photoemission study reveals that the spectral width at Fermi energy and the Fermi velocity of…

Hexagonal boron nitride (hBN) is a natural hyperbolic material which can also accommodate highly dispersive surface phonon-polariton modes. In this paper, we examine theoretically the mid-infrared optical properties of graphene-hBN…

光学 · 物理学 2015-07-03 Anshuman Kumar , Tony Low , Kin Hung Fung , Phaedon Avouris , Nicholas X. Fang

We evaluate the van der Waals (vdW) interaction energy at zero temperature between two undoped strained graphene layers separated by a finite distance. We consider the following three models for the anisotropic case: (a) where one of the…

材料科学 · 物理学 2014-06-25 Anand Sharma , Peter Harnish , Alexander Sylvester , Valeri N. Kotov , A. H. Castro Neto

The role of defects in van der Waals heterostructures made of graphene and hexagonal boron nitride (h-BN) is studied by a combination of ab initio and model calculations. Despite the weak van der Waals interaction between layers, defects…

材料科学 · 物理学 2017-01-04 B. Sachs , T. O. Wehling , M. I. Katsnelson , A. I. Lichtenstein

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…

Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental…

Among two-dimensional atomic crystals, hexagonal boron nitride (hBN) is one of the most remarkable materials to fabricate heterostructures revealing unusual properties. We perform first-principles calculations to determine whether…

介观与纳米尺度物理 · 物理学 2014-04-09 Sohee Park , Changwon Park , Gunn Kim

Heavily doping graphene by intercalation can raise its Fermi level near an extended van Hove singularity, potentially inducing correlated electronic phases. Intercalation also modifies the band structure: dopants may hybridize with carbon…

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve…

We use density functional theory (DFT) with a recently developed van der Waals density functional (vdW-DF) to study the adsorption of graphene on Al, Cu, Ag, Au, Pt, Pd, Co and Ni(111) surfaces. In constrast to the local density…

介观与纳米尺度物理 · 物理学 2015-05-14 M. Vanin , J. J. Mortensen , A. K. Kelkkanen , J. M. Garcia-Lastra , K. S. Thygesen , K. W. Jacobsen

Boron, nitrogen and carbon are neighbors in the periodic table and can form strikingly similar twin structures-hexagonal boron nitride (hBN) and graphene-yet nanofluidic experiments demonstrate drastically different water friction on them.…

Interlayer electron transport through a graphene / hexagonal boron-nitride (h-BN) / graphene heterostructure is strongly affected by the misorientation angle $\theta$ of the h-BN with respect to the graphene layers with different physical…

Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied $\pi$-band as a function of doping using…