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相关论文: Fractional Chern insulators with strong interactio…

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We investigate an interaction-driven transition between crystalline and liquid states of strongly correlated spinless fermions within topological flat bands at low density (with filling factors $\nu=1/5$, $1/7$, $1/9$). Using exact…

强关联电子 · 物理学 2021-08-10 Michał Kupczyński , Błażej Jaworowski , Arkadiusz Wójs

Recent experimental advances have uncovered fractional Chern insulator (FCI) states in twisted MoTe$_2$ (tMoTe$_2$) systems under zero magnetic field. Understanding the interaction effects on topological phases within realistic model…

强关联电子 · 物理学 2026-02-03 Jialin Chen , Qiaoyi Li , Xiaoyu Wang , Wei Li

We show that interacting electrons in a flat Chern band can form, in addition to fractional Chern insulators, a chiral $f$-wave topological superconductor that hosts neutral Majorana fermion edge modes. Superconductivity emerges from an…

超导电性 · 物理学 2025-10-23 Daniele Guerci , Ahmed Abouelkomsan , Liang Fu

It has been recently realized that strong interactions in topological Bloch bands give rise to the appearance of novel states of matter. Here we study connections between these systems -- fractional Chern insulators and the fractional…

强关联电子 · 物理学 2013-08-28 Zhao Liu , D. L. Kovrizhin , Emil J. Bergholtz

Fractional Chern insulators (FCIs) typically emerge in topological flat bands and are regarded as lattice analogs of fractional quantum Hall states. Conventionally, the flat-band wavefunctions that support FCIs are expected to mimic the…

介观与纳米尺度物理 · 物理学 2025-12-01 Moru Song , Kai Chang

Fractional Chern insulators (FCIs) in ideal flat bands with Chern number $C$ are commonly understood as color-entangled states constructed from $C$ copies of the lowest Landau level. In realistic moir\'e systems, however, the band geometry…

介观与纳米尺度物理 · 物理学 2025-11-25 Moru Song , Kai Chang

Fractional Chern insulators (FCI) are exotic phases of matter realized at partial filling of a Chern band that host fractionally charged anyon excitations. Recent numerical studies in several microscopic models reveal that increasing the…

强关联电子 · 物理学 2025-12-23 Zhengyan Darius Shi , T. Senthil

The rapid advances in the study of fractional Chern insulators (FCIs) raise a fundamental question: while initially discovered in flat Chern bands motivated by their topological equivalence to Landau levels, is single- particle band…

强关联电子 · 物理学 2025-10-17 Hongyu Lu , Wang Yao

The experimental discoveries of fractional quantum anomalous Hall effects under zero magnetic fields in both transition metal dichalcogenide and pentalayer graphene moir\'e superlattices have aroused significant research interest. In this…

强关联电子 · 物理学 2024-09-24 Zhongqing Guo , Xin Lu , Bo Xie , Jianpeng Liu

Fractional Chern insulators realize the remarkable physics of the fractional quantum Hall effect (FQHE) in crystalline systems with Chern bands. The lowest Landau level (LLL) is known to host the FQHE, but not all Chern bands are suitable…

强关联电子 · 物理学 2024-04-22 Patrick J. Ledwith , Ashvin Vishwanath , Daniel E. Parker

The search for fractional quantized Hall phases in the absence of a magnetic field has primarily targeted flat-band systems that mimic the features of a Landau level. In an alternative approach, the fractional excitonic insulator (FEI) has…

强关联电子 · 物理学 2025-10-31 Steven Gassner , Ady Stern , C. L. Kane

The recent theoretical discovery of fractional Chern insulators (FCIs) has provided an important new way to realize topologically ordered states in lattice models. In earlier works, on-site and nearest neighbor Hubbard-like interactions…

强关联电子 · 物理学 2013-11-05 Zhao Liu , Emil J. Bergholtz , Eliot Kapit

Fractional Chern insulators (FCI) with crystalline symmetry possess topological invariants that fundamentally have no analog in continuum fractional quantum Hall (FQH) states. Here we demonstrate through numerical calculations on model wave…

强关联电子 · 物理学 2025-07-23 Yuxuan Zhang , Maissam Barkeshli

The Hofstadter model is a popular choice for theorists investigating the fractional quantum Hall effect on lattices, due to its simplicity, infinite selection of topological flat bands, and increasing applicability to real materials. In…

强关联电子 · 物理学 2021-09-09 Bartholomew Andrews , Titus Neupert , Gunnar Möller

We propose a generalized composite fermion (CF) theory for fractional Chern insulators (FCIs) by adapting the quantum mechanics approach of CFs. The theoretical framework naturally produces an effective CF Hamiltonian and a wavefunction…

强关联电子 · 物理学 2025-09-12 Hao Jin , Junren Shi

We report the observation of a new series of Abelian and non-Abelian topological states in fractional Chern insulators (FCI). The states appear at bosonic filling nu= k/(C+1) (k, C integers) in several lattice models, in fractionally filled…

强关联电子 · 物理学 2015-03-20 A. Sterdyniak , C. Repellin , B. Andrei Bernevig , N. Regnault

We describe a mechanism by which fermions in topologically trivial bands can form correlated states exhibiting a fractional quantum Hall (FQH) effect upon introduction of strong repulsive interactions. These states are solid-liquid…

强关联电子 · 物理学 2018-02-07 Stefanos Kourtis

The Harper-Hofstadter model provides a fractal spectrum containing topological bands of any integer Chern number, $C$. We study the many-body physics that is realized by interacting particles occupying Harper-Hofstadter bands with $|C|>1$.…

强关联电子 · 物理学 2015-09-28 Gunnar Möller , Nigel R. Cooper

We address the question of whether fractionally filled bands with a nontrivial Chern index in zero external field could also exhibit a Fractional Quantum Hall Effect (FQHE). Numerical works suggest this is possible. Analytic treatments are…

强关联电子 · 物理学 2011-09-13 Ganpathy Murthy , R. Shankar

Fractional Chern insulators (FCIs) showing a transport effect with fractionally quantized Hall plateaus emerging under zero magnetic field, provide a radically new opportunity to engineer topological quantum electronics. By construction of…