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We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We…

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime…

An interdigitated photoconductive antenna (i-PCA) for terahertz (THz) emission with a novel metal-insulator-semiconductor interface is designed with the aim of developing compact and scalable THz devices. The photoconductive material is an…

We report high average power THz emission from a GaAs-based large-area photoconductive emitter, excited by a commercial Yb-laser amplifier without any compression schemes, doubled to the green. The LAE is pumped at 11.4 W of green average…

Here we perform a series of time-resolved experiments where a 100 fs pump pulse is tuned between 528 nm and 555 nm, across the second indirect gap of intrinsic silicon at ~540 nm which involves electrons in a higher-lying conduction band…

Emitters based on photoconductive materials excited by ultrafast lasers are well established and popular devices for THz generation. However, so far, these emitters, both photoconductive antennas and large area emitters, were mostly…

The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements,…

We describe a compact THz-pump and X-ray-probe beamline, based on an electron linac, for ultrafast time-resolved diffraction applications. Two high-energy electron ($\gamma>50$) bunches, $5~$ns apart, impinge upon a single-foil or a…

In the last few years, many advances have been made in the demonstration of high-average power pulsed THz sources; however, little effort has been made to study compatible sensitive field-resolved detectors. Here, we investigate…

We report here fabrication of interdigitated photoconductive antenna (iPCA) terahertz (THz) emitters based on plasmonic electrode design. Novel design of this iPCA enables it to work without microlens array focusing, which is otherwise…

Even though the terahertz spectrum is well suited for chemical identification, material characterization, biological sensing and medical imaging, practical development of these applications has been hindered by the attributes of terahertz…

Recently, there has been a growing interest in integrated THz photonics for various applications in communications, spectroscopy and sensing. We present a new integrated photonic platform based on active and passive elements integrated in a…

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect…

Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds…

Intense terahertz (THz) radiation in free space offers multifaceted capabilities for accelerating electron, understanding the mesoscale architecture in (bio)materials, elementary excitation and so on. Recently popularized spintronic THz…

The excitation of THz radiation by the interaction of an ultra short laser pulse with the modes of a miniature corrugated plasma waveguide is considered. The axially corrugated waveguide supports the electromagnetic (EM) modes with…

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…

Low power efficiency is one of the main problems of THz sources, colloquially known as the THz gap. In this work we present prototypes of THz devices based on whisker-crystals of a hightemperature superconductor Bi2Sr2CaCu2O8+d with a…

Germanium-on-Silicon (Ge-on-Si) is a promising, CMOS-compatible platform for integrated terahertz (THz) photonics, offering a low-cost alternative to III-V semiconductors. A primary challenge for Ge-based photoconductive antennas (PCAs),…

We present a high-power source of broadband terahertz radiation covering the whole THz spectral region (0.1-30 THz). The two-color gas plasma generation process is driven by a state-of-the-art Ytterbium fiber chirped pulse amplification…