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THz photoconductive antennas are among the most popular devices for THz wave generation and detection. A novel and accurate circuit is proposed to model the performance of such antennas, especially those which are frequency dependant. The…

Although the THz spectral range experiences a tremendous grow of interest for at least two decades, it is still one of the least explored but most exciting areas to study light-matter interaction. Due to the small photon energy of THz…

Thermophotovoltaic (TPV) converters are capable of generating electrical energy from infrared radiation emitted by an emitter powered by waste heat or solar energy. Key performance metrics for TPV converters are power output density (POD),…

Terahertz (THz) radiation is a powerful tool with widespread applications ranging from imaging, sensing, and broadband communications to spectroscopy and nonlinear control of materials. Future progress in THz technology depends on the…

We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…

Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the…

We demonstrate that the phase-matched dispersive wave (DW) emission within the resonance band of a 25-cm-long gas-filled hollow-core photonic crystal fiber (HC-PCF) can be strongly enhanced by the photoionization effect of the pump pulse.…

We demonstrate a table-top high-field terahertz (THz) source based on optical rectification of a collimated near-infrared pulse in gallium phosphide (GaP) to produce peak fields exceeding 300 kV/cm with a spectrum centered at 2.6 THz. The…

Terahertz pulse generation by ultra-intense two-color laser fields ionizing gases with near- to far-infrared carrier wavelength is studied from particle-in-cell (PIC) simulations. For long wavelength ($10.6\ \mu$m) promoting a large ratio…

Studies employing nonlinear interactions of THz pulses are nowadays a promising scientific research field. To capture these phenomena, THz pulses with energy ranging from hundreds of \muJ to the mJ level are necessary. However, techniques…

In this paper, we report on an approach for shaping the spectra of THz pulse generation in photoconductive antennas (PCAs) by frequency-dependent impedance modulation. We introduce a theoretical model describing the THz pulse generation in…

The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…

We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…

A multi-element interdigitated photoconductive emitter for broadband THz polarization rotation is proposed and experimentally verified. The device consists of separate pixels for the emission of horizontally and vertically polarized THz…

Experimental results of direct measurement of resonant monochromatic terahertz emission optically excited in InGaAs transistor channels are presented. The emission is attributed to two-dimensional plasma waves excited by photogeneration of…

Momentum and energy balance equations are developed for steady-state electron transport and optical absorption under the influence of a dc electric field, an intense ac electric field of terahertz (THz) frequency in a two-dimensional (2D)…

This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…

In particle accelerators, the build-up of electron cloud may have important influence on beam quality. Especially for the positron and proton accelerators, massive electrons lead to electron cloud, which affects the stability, energy,…

Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…