相关论文: Heteroepitaxy of Group IV-VI Nitrides by Atomic La…
Heteroepitaxial spinel ferrites NiFe2O4 and CoFe2O4 films have been prepared by pulsed laser deposition (PLD) at various temperatures (175 - 690 {\deg}C) under ozone/oxygen pressure of 10 mTorr. Due to enhanced kinetic energy of ablated…
This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A…
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices. The two major difficulties are growth of high…
We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and…
Epitaxial films have the potential to be used as model systems for fundamental investigations on the martensitic transformation in binary NiTi. In this paper, we discuss growth of binary NiTi thin films on single crystalline MgO substrates.…
Thin layers of orthorhombic uranium ({\alpha}-U) have been grown onto buffered sapphire substrates by d.c. magnetron sputtering, resulting in the discovery of new epitaxial matches to Ti(00.1) and Zr(00.1) surfaces. These systems have been…
Epitaxial titanium diboride thin films have been deposited on sapphire substrates by Pulsed Laser Ablation technique. Structural properties of the films have been studied during the growth by Reflection High Energy Electron Diffraction…
We report x-ray synchrotron experiments on epitaxial films of uranium, deposited on niobium and tungsten seed layers. Despite similar lattice parameters for these refractory metals, the uranium epitaxial arrangements are different and the…
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality…
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic…
NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active…
$\beta-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $\beta-Ga_2O_3$ epitaxial…
(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two series of samples, where different laser fluences are used…
Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $\chi^{(2)}$ allows single-photon…
Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental…
We have studied the growth of Fe3O4 (111) epitaxial films on Al2O3 (001) substrates using a pulsed laser deposition / thermal reduction cycle using an {\alpha}-Fe2O3 target. While direct deposition onto the Al2O3 (001) substrates results in…
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray…