相关论文: Elastic Strains in SiGe Heterostructure With Non-U…

Germanium-silicon-germanium (Ge/Si$_{x}$Ge$_{1-x}$) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where strain and quantum confinement strongly reshape the Ge valence…

The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces…

This study of elastic and plastic deformation of graphene, silicene, and boron nitride (BN) honeycomb nanoribbons under uniaxial tension determines their elastic constants and reveals interesting features. In the course of stretching in the…

For small tension the response of a solid to an applied stress is given by Hooke's law. Outside this linear regime the relation between stress and strain is no longer universal and at present there is no satisfactory insight on how to…

We explore the inelastic electron scattering cross section off a quantum dot close to the Stoner instability. We focus on the regime of strong Coulomb blockade in which the scattering cross section is dominated by the cotunneling processes.…

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction…

The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with…

A one-band model within the effective mass approximation is adopted to characterize the energy structure and oscillator strength of type-II semiconductor spherical core-shell quantum dots. The heteroepitaxial strain of the core-shell…

We theoretically consider the effect of strain on the spin dynamics of a single heavy-hole (HH) confined to a self-assembled quantum dot and interacting with the surrounding nuclei via hyperfine interaction. Confinement and strain hybridize…

This paper presents a comprehensive computational framework for investigating thermo-elastic fracture in transversely isotropic materials, where classical linear elasticity fails to predict physically realistic behavior near stress…

We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is…

Two dimensional simulations of non-cohesive granular matter in a biaxial shear tester are discussed. The effect of particle elasticity on the mechanical behavior is investigated using two complementary distinct element methods (DEM): Soft…

Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of different well width (4 nm, 6 nm, 8 nm and 10 nm) by electron…

We model polydomain liquid-crystal elastomers by extending the neo-classical soft and semi-soft free energies used successfully to describe monodomain samples. We show that there is a significant difference between polydomains cross-linked…

We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…

The study investigates and compares the impact of intense, non-diffractive, non-resonant structured laser beams with various intensity profiles on the properties of InAs/GaAs cylindrical quantum dot. The comparative study demon-strates that…

In this article, eigenfrequencies of nano-beams under axial loads are assessed by making recourse to the well-posed stress-driven nonlocal model (SDM) and strain-driven two-phase local/nonlocal formulation (NstrainG) of elasticity and…

We have theoretically examined the size dependence of the equilibrium lattice constant of nanocrystals of Si, GaAs and CdSe. While deviations from the bulk lattice constant are as large as 1-2% for unpassivated nanocrystals of Si, the…

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD…

In this work we model the evolution of strain energy during different growth stages of heterostructure nanowires. We find that the minimum energy configuration changes abruptly from fully elastically strained to partially relaxed due to…