相关论文: Elastic Strains in SiGe Heterostructure With Non-U…
We explore the static longitudinal and dynamic transverse spin susceptibilities in quantum dots and nanoparticles within the framework of the Hamiltonian that extends the universal Hamiltonian to the case of uniaxial anisotropic exchange.…
Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and larger gate structure dimensions. One limiting factor for the…
Carbon nanotubes are one-dimensional and very narrow. These obvious facts imply that under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of…
The diffraction of fast atoms at crystal surfaces is ideal for a detailed investigation of the surface electronic density. However, instead of sharp diffraction spots, most experiments show elongated streaks characteristic of inelastic…
We investigate the effect of strain-induced gauge fields on statistical distribution of energy levels of triangular graphene nanoflakes with zigzag edges. In the absence of strain fields but in the presence of weak potential disorder such…
The mechanical response of isotropic elastoplastic materials containing random distributions of initially spherical voids is investigated computationally based on Fast Fourier Transform simulations. Numerical limit-analysis simulations at…
Torsional oscillator experiments show evidence of mass decoupling in solid 4He. This decoupling is amplitude dependent, suggesting a critical velocity for supersolidity. We observe similar behavior in the elastic shear modulus. By measuring…
The symmetry of exchange interaction of charge carriers in semiconductor nanostructures (quantum wells and quantum dots) is analysed. It is shown that the exchange Hamiltonian of two particles belonging to the same energy band can be…
Inelastic spin relaxation and spin splitting $\epsilon_{\mathrm{s}}$ in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Due to both g-factor energy dependence and spin-orbit coupling $\epsilon_{\mathrm{s}}$…
We present a numerical study on geometric percolation in liquid dispersions of hard slender colloidal particles subjected to an external orienting field. In the formulation and liquid-state processing of nanocomposite materials, the…
In this third and final paper of a series, elastic properties of numerically simulated isotropic packings of spherical beads assembled by different procedures and subjected to a varying confining pressure P are investigated. In addition P,…
We present a phenomenological time-dependent Ginzburg-Landau theory of nonlinear plastic deformations in solids. Because the problem is very complex, we first give models in one and two dimensions without vacancies and interstitials, where…
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the…
More than half a century ago Penrose asked: are the superfluid and solid state of matter mutually exclusive or do there exist "supersolid" materials where the atoms form a regular lattice and simultaneously flow without friction? Recent…
We investigate the impact of different connectivities on the decoherence time in quantum systems under quasi-static Heisenberg noise. We considered three types of elementary units, including node, stick and triangle and connect them into…
In this paper we systematically analyze the electronic structures of polar and nonpolar wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark effect caused by intrinsic fields. This is achieved by combining…
The static diffraction intensity distribution from large material system conceived as perfectly homogeneous system made inhomogeneous, though substitution of groups of atoms, small particles, by other groups of atoms, is explicitly…
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a deeper understanding of the origin of these spurious dots, we…
Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…
We calculate the electronic structure of germanium-tin (Ge$_{1-x}$Sn$_{x}$) binary alloys for $0 \leq x \leq 1$ using density functional theory (DFT). Relaxed alloys with semiconducting or semimetallic behaviour as a function of Sn…