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The topological effects of phonons have been extensively studied in various materials, particularly in the wide-bandgap semiconductor GaN, which has the potential to improve heat dissipation in power electronics due to its intrinsic,…

材料科学 · 物理学 2023-10-17 Daosheng Tang

The structural and vibrational properties of phenanthrene are measured at high pressures up to 30.2 GPa by Raman spectroscopy and synchrotron x-ray diffraction techniques. Two phase transitions are observed in raman spectra under pressures…

We investigate the nonequilibrium photocarrier dynamics of WTe2 under pressure using the optical pump-probe spectroscopy. The pressure dependences of the electronic relaxation manifest anomalous changes around 0.8, 3.5, and 6 GPa,…

强关联电子 · 物理学 2023-03-10 Kai Zhang , Fuhai Su , Dayong Liu , Wenjun Wang , Yongsheng Zhang , Zhi Zeng , Zhe Qu , Alexander F. Goncharov

Pressure-induced changes in the Fermi surface of Cd up to 40 GPa are studied using highly accurate density-functional theory calculations. The topology of Fermi surface changes at pressures of 2, 8, 12 , 18 and 28 GPa indicating electronic…

材料科学 · 物理学 2015-11-09 Varadharajan Srinivasan , B. K. Godwal , Jeffrey C. Grossman , Raymond Jeanloz

We have investigated the phonon, elastic and thermodynamic properties of L1$_{2}$ phase Al$_{3}$Ta by density functional theory approach combining with quasi-harmonic approximation model. The results of phonon band structure shows that…

材料科学 · 物理学 2018-04-02 W. Leini , T. Zhang , Z. Wu , N. Wei

High pressure x-ray diffraction up to 30 GPa and resonant emission x-ray spectroscopy and partial fluorescence yield x-ray absorption spectroscopy up to 52 GPa were used to study how the structural and electronic properties of UTe$_2$…

The equations of state at room temperature as well as the energies of crystal structures up to pressures exceeding 100 GPa are calculated for Na and K . It is shown that the allowance for generalized gradient corrections (GGA) in the…

材料科学 · 物理学 2009-10-31 M. I. Katsnelson , G. V. Sinko , N. A. Smirnov , A. V. Trefilov , K. Yu. Khromov

First principles electronic structure calculations of A-15 type Nb$_3$X (X = Al, Ga, In, Ge and Sn) compounds are performed at ambient and high pressures. Mechanical stability is confirmed in all the compounds both at ambient as well as…

材料科学 · 物理学 2016-06-03 P. V. Sreenivasa Reddy , V. Kanchana , G. Vaitheeswaran , P. Modak , Ashok K. Verma

Pressure induced electronic topological transitions in the wide band gap semiconductor Sb2S3 (Eg = 1.7-1.8 eV) with similar crystal symmetry (SG: Pnma) to its illustrious analog, Sb2Se3, has been studied using Raman spectroscopy,…

We present a comprehensive first--principles study of the structural stability and superconducting behavior of Li$_2$PdH$_2$ under high pressure. Using random structure searching and phonon calculations, we identify a pressure--induced…

超导电性 · 物理学 2025-08-08 Zahra Alizadeh , Yue-Wen Fang , Ion Errea , M. R. Mohammadizadeh

In recent years, a low pressure transition around P $\sim$ 3 GPa exhibited by the A$_2$B$_3$-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory…

材料科学 · 物理学 2016-03-23 Achintya Bera , Koushik Pal , D V S Muthu , U V Waghmare , A K Sood

We report the structural, vibrational and electrical transport properties up to 16 GPa of the 1T-TiTe2, a prominent layered 2D system, which is predicted to show a series of topologically trivial - nontrivial transitions under hydrostatic…

The electronic structure, Fermi surface and elastic properties of the iso-structural and iso-electronic LaSn$_3$ and YSn$_3$ intermetallic compounds are studied under pressure within the framework of density functional theory including…

材料科学 · 物理学 2013-11-07 Swetarekha Ram , V. Kanchana , G. Vaitheeswaran , A. Svane , S. B. Dugdale , N. E. Christensen

A first-principles density-functional-theory method has been used to reinvestigate the mechanical and dynamical stability of the metallic phase of AlH3 between 65-110 GPa. The electronic properties and phonon dynamics as a function of…

超导电性 · 物理学 2015-05-18 A. K. M. A. Islam , M. M. Ali , M. L. Ali

Alkali metals display unexpected properties at high pressure, including emergence of low symmetry crystal structures, that appear to occur due to enhanced electronic correlations among the otherwise nearly-free conduction electrons. We…

强关联电子 · 物理学 2015-06-23 G. Fabbris , J. Lim , L. S. I. Veiga , D. Haskel , J. S. Schilling

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral ({\alpha}-Bi2Te3) to monoclinic ({\beta}-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1…

材料科学 · 物理学 2015-06-03 Gopal K. Pradhan , Achintya Bera , Pradeep Kumar , D. V. S. Muthu , A. K. Sood

In situ high-pressure energy dispersive x-ray diffraction experiments on polycrystalline powder TiN with NaCl-type structure have been conducted with the pressure up to 30.1 GPa by using the diamond anvil cell instrument with synchrotron…

材料科学 · 物理学 2009-11-11 J. G. Zhao , L. X. Yang , Y. Yu , S. J. You , R. C. Yu , L. C. Chen , F. Y. Li , C. Q. Jin , X. D. Li , Y. C. Li , J. Liu

We investigate the crystal structure and lattice vibrations of Sr$_2$IrO$_4$ by a combined phonon Raman scattering and x-ray powder diffraction experiment under pressures up to $66$ GPa and room temperature. Density functional theory (DFT)…

强关联电子 · 物理学 2018-09-05 K. Samanta , F. M. Ardito , N. M. Souza-Neto , E. Granado

Ultrafast two-color pump-probe measurements, involving coherent acoustic phonon (CAP) waves, have provided information simultaneously on the mechanical properties and on the electronic structure of ferromagnetic GaMnAs. The elastic constant…

材料科学 · 物理学 2012-09-18 J. Qi , J. A. Yan , H. Park , A. Steigerwald , Y. Xu , S. N. Gilbert , X. Liu , J. K. Furdyna , S. T. Pantelides , N. Tolk

The high-pressure structural behavior of lanthanum monochalcogenides is investigated by theory and experiment. Theory comprises density functional calculations of LaS, LaSe and LaTe with the general gradient approximation for exchange and…

材料科学 · 物理学 2009-11-13 G. Vaitheeswaran , V. Kanchana , S. Heathman , M. Idiri , T. Le Bihan , A. Svane , A. Delin , B. Johansson
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