相关论文: Electron-Hole Pair Generation in SiC High-Temperat…

For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy $\epsilon_{\text{i}}$ published in the literature vary significantly. This work presents an experimental determination of $\epsilon_{\text{i}}$ using…

We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of…

In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems. Therefore, the development of particle detectors capable of…

It has been theoretically shown that in large-density semiconductor plasma there exist an energy level of a bound electron-hole pair (a composite boson) at the band gap. Filling this level up occurs through the condensation of electron-hole…

We demonstrate that individual electron-hole pairs are resolved in a 1 cm$^2$ by 4 mm thick silicon crystal (0.93 g) operated at $\sim$35 mK. One side of the detector is patterned with two quasiparticle-trap-assisted…

Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9…

This White Paper seeks to extend the applications of two weakly bound semiconductor materials, Cs3Sb and Ag-O-Cs first developed decades ago for vacuum photodetectors S1, S-11 photocathodes, respectively, proven to have low electron-hole…

Pairing of electrons in conventional superconductors occurs at the superconducting transition temperature Tc, creating an energy gap D in the electronic density of states (DOS). In the high-Tc superconductors, a partial gap in the DOS…

We have developed MICROMEGAS (MICRO MEsh GASeous) detectors for detecting {\alpha} particles emitted from an 241-Am standard source. The voltage applied to the ionization region of the detector is optimized for stable operation at room…

Fully-depleted thick silicon Skipper-charge-coupled devices (Skipper-CCDs) are an important technology to probe neutrino and light-dark-matter interactions due to their sub-electron read-out noise. However, the successful search for rare…

The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…

The master equation for the cluster-size distribution function is solved numerically to investigate the electron-hole droplet formation claimed to be discovered in the direct-gap CuCl excited by picosecond laser pulses [Nagai {\em et al.},…

Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18…

The analysis of all published results on electrons and holes impact ionization coefficients in 4H-SiC at 300K have been performed. It is shown that the most plausible approximation of dependencies $\alpha_{n,p}$ on the electric field…

Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level…

In some extra dimension theories with a TeV fundamental Planck scale, black holes could be produced in future collider experiments. Although cross sections can be large, measuring the model parameters is difficult due to the many…

Electron excitations at silicon and 3C-SiC surfaces caused by an intense femtosecond laser pulse can be calculated by solving the time-dependent density functional theory and the Maxwell's equation simultaneously. The energy absorption,…

The increasing concentration of greenhouse gases, notably CH4 and CO2, has fueled global temperature increases, intensifying concerns regarding the prevailing climate crisis. Effectively monitoring these gases demands a detector spanning…

Semiconductor detectors made of CdTe crystal have high gamma-ray detection efficiency and are usable at room temperature. However, the energy resolution of CdTe detectors for MeV gamma-rays is rather poor because of the significant hole…

The performance of a silicon photomultiplier has been assessed at low temperature in order to evaluate its suitability as a scintillation readout device in liquid argon particle physics detectors. The gain, measured as 2.1E6 for a constant…