相关论文: Electron-Hole Pair Generation in SiC High-Temperat…

In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I-V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric…

Silicon Carbide (SiC) is a wide bandgap semiconductor material recently being used in replacement of traditional semiconductors for high-voltage power device applications. Radiation environments induce defects through displacement damage in…

600V/20A 4H-SiC Schottky barrier diodes (SBD) were fabricated to investigate the effect of key processing steps, especially before and after a formation of Schottky contact, on the electrical performances of SBD and on a long-term…

At high luminosities black hole binaries show spectra with a strong disc component accompanied by an equally strong tail where at least some of the electrons are non-thermal. We reanalyze the simultaneous ASCA-RXTE-OSSE data from the 1998…

This study demonstrates a substantial enhancement of breakdown voltage in $\beta$-Ga$_2$O$_3$ Schottky diodes through an approach that combines fast neutron irradiation with controlled post-irradiation electro-thermal annealing. Devices…

A calculation of the high-harmonic generation (HHG) in $\alpha$-quartz using the time-dependent density functional theory is reported. The inter-band process is attributed to the dominant in HHG above the band gap. The photon energy is set…

A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \{beta}-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on \{beta}-Ga2O3 for…

3He-rich solar energetic particles (SEPs) are believed to be accelerated in solar flares or jets by a mechanism that depends on the ion charge-to-mass (Q/M) ratio. It implies that the flare plasma characteristics (e.g., temperature) may be…

We present here a microscopic two-band model based on the structure of energetic levels of holes in $\mathrm{CuO}_{2}$ conducting layers of cuprates. We prove that two energetically near-lying interacting bands can explain the electron-hole…

Silicon photomultipliers (SiPMs) are a good alternative to photomultiplier tubes (PMTs) because their gain and quantum efficiency are comparable to PMTs. However, the largest single-chip SiPM is still less than 1~cm$^2$. In order to use…

Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of…

3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are…

The basis of low-temperature superconductivity has been set to be the pair formation of electrons, due to their effective attraction. The appearance of an effective attraction potential has also been predicted for electron-electron…

We study the possibility of observing Schwinger pair production enhanced by a thermal bath of photons. We consider the full range of temperatures and electric field intensities from pure Schwinger production to pure thermal production, and…

Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages…

The characteristic properties of two-phase Ar avalanche detectors, including those obtained with CsI photocathode, are further studied. Such detectors are relevant in the field of coherent neutrino-nucleus scattering and dark matter search…

We report on the fabrication and temperature-dependent characterization of MOCVD-grown quasi-vertical AlN Schottky barrier diodes (SBDs) on bulk AlN substrates. The SBDs exhibited high current densities exceeding 2 kA/cm2 at 10 V, with a…

A new search for production of correlated e+e- pairs in the alpha decay of 241Am has been carried out deep underground at the Gran Sasso National Laboratory of the I.N.F.N. by using pairs of NaI(Tl) detectors of the DAMA/LIBRA set-up. The…

High harmonic generation (HHG) in solids reflects the underlying nonperturbative nonlinear dynamics of electrons in a strong light field and is a powerful tool for ultrafast spectroscopy of electronic structures. Photo-carrier doping allows…

In this paper, we investigate the electrical evolution of tungsten (W) and tungsten carbide (WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing temperatures from 475 to 700 {\deg} C. For each annealing…