相关论文: Photoluminescence in amorphous MgSiO_3 silicate
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
We develop a phenomenological theory of inhomogeneous broadening in zero-dimensional systems and apply it to study photoluminescence (PL) spectra of silicon nanocrystals measured at helium and room temperatures. The proposed approach…
Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field…
The enhancement of Er$^{3+}$-based up-conversion for photovoltaics in multilayer porous silicon photonic structures is considered theoretically and experimentally. Transfer matrix simulations are used to assess the increased photonic…
Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active…
Dielectric permittivity measurements show that (1-x)NaNbO3-(x)Gd1/3NbO3 crystals, at $x=0.09$, exhibit a first order phase transition near 150 C which is diffuse over a wide temperature interval. The area of the \epsilon(T) thermal…
We report a significant enhancement of room-temperature photoluminescence from trivalent erbium-doped (Er3+) silicon nitride (Si3N4) metasurfaces at the telecommunication wavelength prepared via ion implantation. The metasurfaces,…
In quantum materials, degeneracies and frustrated interactions can have a profound impact on the emergence of long-range order, often driving strong fluctuations that suppress functionally relevant electronic or magnetic phases. Engineering…
We report on low temperature photoluminescence (PL) and EPR study of bulk polycrystalline ZnO . Variation of peak position of donor bound exciton transition (D1XA) and FXAn=1-1LO with pump intensity show red shift and blue shift…
Reversible and irreversible discontinuities at around 573 K and 823 K in the electric conductivity of a strained 175 nm thin film of (La0.8Sr0.2)0.95Ni0.2Fe0.8O3-{\delta} grown by pulsed laser deposition on SrTiO3 (110) are reflected by…
A Mn valence instability on La2/3Ca1/3MnO3 thin films, grown on LaAlO3 (001)substrates is observed by x-ray absorption spectroscopy at the Mn L-edge and O K-edge. As-grown samples, in situ annealed at 800 C in oxygen, exhibit a Curie…
Chalcogenide perovskites have emerged as promising lead free materials for photovoltaic and thermoelectric applications. Among them, BaZrS3 has attracted particular attention due to its thermal and chemical stability, favorable…
An intense low-energy broad luminescence peak (L-peak) is usually observed in 2D transition metal dichalcogenides (TMDs) at low temperatures. L-peak has earlier been attributed to bound excitons, but its origins are widely debated with…
The article describes an experimental method that allows to estimate the inhomogeneous and homogeneous linewidths of the photoluminescence band of a point defect in an amorphous solid. We performed low temperature time-resolved luminescence…
At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing…
Optical transitions of an Er$_2$O$_3$ film on a Si substrate grown by using a metal-organic chemical vapor deposition technique were investigated in a wide temperature (300 K $\sim$ 5 K) and spectral (500 nm and 850 nm) ranges. Numerous…
We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8K to 200K. We evaluate the…
The mobility of O atoms at very low temperatures is not generally taken into account, despite O diffusion would add to a series of processes leading to the observed rich molecular diversity in space. We present a study of the mobility and…
We report a pronounced peak effect in the magnetization and the magnetocaloric coefficient in a single crystal of the superconductor Nb3Sn. As the origin of the magnetization peak effect in classical type-II superconductors is still…
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500…