相关论文: Silicon avalanche photodiode operation and lifetim…

Fast gated avalanche photodiodes (APDs) are the most commonly used single photon detectors for high bit rate quantum key distribution (QKD). Their robustness against external attacks is crucial to the overall security of a QKD system or…

Throughout a typical Earth orbit a satellite is constantly bombarded by radiation with trapped and solar protons being of particular concern as they gradually damage the focal plane devices throughout the mission and degrade their…

Circumplanetary disks (CPDs) may be essential to the formation of planets, regulating their spin and accretion evolution. We perform a series of 3D hydrodynamics simulations in both the isothermal and adiabatic limits to systematically…

For the SPECTRAP experiment at GSI, Germany, detectors with Single-Photon counting capability in the visible and near-infrared regime are required. For the wavelength region up to 1100 nm we investigate the performance of 2x2 mm^2 avalanche…

Synchrotron radiation light sources produce intense beam of X-ray with ultra-short pulse and nanosecond period. This of-fers the opportunities for the time resolution experiments. Achieving higher counting rate and faster arriving time is…

A 2D model of an InGaAs/InAlAs single photon avalanche photodiode has been developed. The influence of the active area structure in the multiplication region on the diode's operating parameters has been studied. It was found that changing…

We demonstrate a low noise short wavelength infrared (SWIR) Sb based type II superlattice (T2SL) avalanche photodiodes (APD). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by…

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good…

We investigated the reset time of superconducting nanowire avalanche photodetectors (SNAPs) based on 30 nm wide nanowires. We studied the dependence of the reset time of SNAPs on the device inductance and discovered that SNAPs can provide a…

The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1 $\mu$m based on the method proposed in Ref.1, are presented. The aim of the study is to achieve a deeper…

We report on the performance of an analog application-specific integrated circuit (ASIC) developed aiming for the front-end electronics of the X-ray CCDcamera system onboard the next X-ray astronomical satellite, ASTRO-H. It has four…

Low-Gain Avalanche Diodes (LGADs) are fast silicon sensors with internal charge multiplication and are key candidates for precision timing layers in future high-energy hadron colliders. Their operation in harsh radiation environments,…

Protoplanetary disks are thought to have lifetimes of several million years in the solar neighborhood, but recent observations suggest that the disk lifetimes are shorter in a low metallicity environment. We perform a suite of radiation…

We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90~mK to 40~K. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics were tested. Operating voltage ranges, dark count…

Silicon Photomultipliers (SiPMs) are single photon detectors that gained increasing interest in many applications as an alternative to photomultiplier tubes. In particular in the field of space experiments, where volume, weight and power…

The Geiger photodiodes, or single photon avalanche photodiodes, for a radiation tolerant solid-state photomultiplier (SSPM) are being designed using Aluminum Gallium Arsenide (AlGaAs) and are less than 1 micrometer thick. Studies on the…

Implementation of high-speed quantum key distribution~(QKD) has become one of the major focus in the field, which produces high key-generation rate for applications. To achieve high-speed QKD, tailored techniques are developed and employed…

We present an active quenching application specific integrated circuit (ASIC), for use in conjunction with InGaAs/InP avalanche photodiodes (APDs), for 1550 nm single-photon detection. To evaluate its performance, we first compare its…

The discrete modeling of the Geiger-mode APD is considered. Results of modeling and experimental measurements with the SiPM show that the known formula for the charge of the avalanche pulse Q=dU*Cd underestimates its value. In addition, it…

Single-photon avalanche diode (SPAD) arrays are solid-state detectors offering imaging capabilities at the level of individual photons, with unparalleled photon counting and time-resolved performance. This fascinating technology has…