相关论文: Silicon avalanche photodiode operation and lifetim…

Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor,…

Recent years getting progress in the area of micropixel avalanche photodiode makes them attractive as sensors for scintillation detectors. The performance of the scintillation detectors is strongly tied to the physical properties of MAPD.…

This work presents stochastic approaches to model the counting behavior of actively quenched single-photon avalanche diodes (SPADs) subjected to continuous-wave constant illumination. We present both analytical expressions and simulation…

We present a method designed to efficiently extract optical signals from InGaAs avalanche photodiodes (APDs) operated in gated mode. In particular, our method permits an estimation of the fraction of counts which actually results from the…

Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications…

We demonstrate an efficient photon number detector for visible wavelengths using a silicon avalanche photodiode. Under subnanosecond gating, the device is able to resolve up to four photons in an incident optical pulse. The detection…

Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work we report on a fitting technique used to account for different detector responses resulting from photo absorption in the various APD layers. The use of…

We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of…

Optical intensity interferometry, developed in the 1950s, is a simple and inexpensive method for achieving angular resolutions on microarcsecond scales. Its low sensitivity has limited intensity interferometric observations to bright stars…

Silicon avalanche photodiodes are the most sensitive photodetectors in the visible to near infrared region. However, when they are used for single photon detection in a Geiger mode, they are known to emit light on the controlled breakdown…

It is challenging to implement genuine free running single photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for…

The Low Gain Avalanche Diodes (LGADs) are promising particle detectors for timing resolution better than $50$ ps under a high radiation environment. This study investigates n-in-p LGAD architecture, focusing on ultra-thin sensors of…

Silicon single-photon detectors (Si SPDs) play a crucial role in detecting single photons in the visible spectrum. For various applications, photon detection efficiency (PDE) is the most critical characteristic for effectively collecting…

This work aims at controlling the bias voltage of APDs, used for single photon detection, with a micro-controller through pulse height comparison.

Silicon Photo-multipliers (SiPMs) are very sensitive photo-detectors that experienced a big development in the last years in several applications, like LIDAR, astrophysics, medical imaging and high energy physics (HEP) experiments. In HEP…

The upgrades of ATLAS and CMS for the High Luminosity LHC (HL-LHC) highlighted physics objects timing as a tool to resolve primary interactions within a bunch crossing. Since the expected pile-up is around 200, with an r.m.s. time spread of…

We have integrated a commercial avalanche photodiode (APD) and the circuitry needed to operate it as a single-photon detector (SPD) onto a single PC-board. At temperatures accessible with Peltier coolers (~200-240K), the PCB-SPD achieves…

An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change…

A measurement system for determining the gain distributions of avalanche photodiodes (APDs) in a low gain range is presented. The system is based on an ultralow-noise charge--sensitive amplifier and detects the output carriers from an APD.…

Miller formula modified to take into account voltage drop on serial resistor of an avalanche photodiode is considered. It is proven by experimental data that modified Miller formula can describe operation of both regular and micropixel…