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相关论文: Weak localization scattering lengths in epitaxial,…

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The conductivity and Hall effect were measured in CVD-grown monolayer graphene as a function of the gate voltage, $V_{g}$, at temperatures down to $T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was observed at…

材料科学 · 物理学 2018-01-12 Erez Zion , Alexander Butenko , Amos Sharnoi , Moshe Kaveh , Issai Shlimak

We show that the enhancement of backscattering responsible for the weak localization is accompanied by reduction of the scattering in other directions. A simple quasiclassical interpretation of this phenomenon is presented in terms of a…

介观与纳米尺度物理 · 物理学 2009-09-25 A. P. Dmitriev , I. V. Gornyi , V. Yu. Kachorovskii

Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene is known to be susceptible to quantum interference corrections of the conductivity,…

Due to the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalisation and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p/-p symmetry of the Fermi line in…

介观与纳米尺度物理 · 物理学 2007-05-23 E. McCann , K. Kechedzhi , Vladimir I. Fal'ko , H. Suzuura , T. Ando , B. L. Altshuler

We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings the quantum Hall effect…

介观与纳米尺度物理 · 物理学 2009-10-01 J. Eroms , D. Weiss

We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy, and determined carrier scattering rate (g) as function of the varied carrier density (n). The n-dependent g(n) was obtained for a series of…

材料科学 · 物理学 2019-11-07 Kwangnam Yu , Jiho Kim , Joo Youn Kim , Wonki Lee , Jun Yeon Hwang , E. H. Hwang , E. J. Choi

The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons…

介观与纳米尺度物理 · 物理学 2009-03-27 F. V. Tikhonenko , A. A. Kozikov , A. K. Savchenko , R. V. Gorbachev

Electrical transport in graphene offers a fascinating parallel to spin transport in semiconductors including the spin-Hall effect. In the weak momentum scattering regime the steady-state density matrix contains two contributions, one linear…

介观与纳米尺度物理 · 物理学 2009-11-13 Dimitrie Culcer , R. Winkler

In this study, we investigate the weak localization (WL) and weak antilocalization (WAL) effects in twisted bilayer graphene positioned on a hexagonal boron nitride substrate. The bottom graphene layer aligns with the hexagonal boron…

介观与纳米尺度物理 · 物理学 2023-07-12 Hongyi Yan , Haiwen Liu

We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic…

介观与纳米尺度物理 · 物理学 2015-05-27 B. Jouault , B. Jabakhanji , N. Camara , W. Desrat , C. Consejo , J. Camassel

Collective transport through a multichannel disordered conductor in contact with charge-density-wave electrodes is theoretically investigated. The statistical distribution function of the threshold potential for charge-density wave sliding…

介观与纳米尺度物理 · 物理学 2009-10-31 Mark I. Visscher , Behzad Rejaei , Gerrit E. W. Bauer

Transport properties of single-layer graphene with correlated one-dimensional defects are studied using the time-dependent real-space Kubo-Greenwood formalism. Such defects are present in epitaxial graphene, comprising atomic terraces and…

介观与纳米尺度物理 · 物理学 2014-08-06 T. M. Radchenko , A. A. Shylau , I. V. Zozoulenko

An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can…

凝聚态物理 · 物理学 2007-05-23 M. A. Zudov , C. L. Yang , R. R. Du , T. -C. Shen , J. -Y. Ji , J. S. Kline , J. R. Tucker

The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related…

介观与纳米尺度物理 · 物理学 2015-05-30 Wenjuan Zhu , Christos Dimitrakopoulos , Marcus Freitag , Phaedon Avouris

We study the conductivity of a graphene strip taking into account electrostatically-induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size…

介观与纳米尺度物理 · 物理学 2010-12-09 F. T. Vasko , I. V. Zozoulenko

We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been…

介观与纳米尺度物理 · 物理学 2015-05-19 Sungbae Lee , Nelka Wijesinghe , Carlos Diaz-Pinto , Haibing Peng

The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…

介观与纳米尺度物理 · 物理学 2016-09-02 R. S. Gonnelli , F. Paolucci , E. Piatti , Kanudha Sharda , A. Sola , M. Tortello , Jijeesh R. Nair , C. Gerbaldi , M. Bruna , S. Borini

We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the…

介观与纳米尺度物理 · 物理学 2007-05-23 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin

The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…

The derived by us earlier electron scattering matrix for the short-range defects in monolayer graphene is applyed to description of the resistivity electron density dependence. It is argued that large charged defect density is unlikely in…

介观与纳米尺度物理 · 物理学 2011-11-04 Natalie E. Firsova , Sergey A. Ktitorov