中文
相关论文

相关论文: Weak localization scattering lengths in epitaxial,…

200 篇论文

Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the…

介观与纳米尺度物理 · 物理学 2015-07-29 E. Zion , A. Haran , A. V. Butenko , L. Wolfson , Yu. Kaganovskii , T. Havdala , A. Sharoni , D. Naveh , V. Richter , M. Kaveh , E. Kogan , I. Shlimak

We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the…

介观与纳米尺度物理 · 物理学 2011-10-03 M. O. Nestoklon , N. S. Averkiev , S. A. Tarasenko

We investigate the dependence of the electrical resistivity of $\sim 60 $nm thick single crystalline graphite samples on the defect concentration produced by proton irradiation at very low fluences. We show that the resistivity decreases…

材料科学 · 物理学 2009-11-03 A. Arndt , D. Spoddig , P. Esquinazi , J. Barzola-Quiquia , T. Butz

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates…

The dependence of the localization length on the number of occupied subbands $N$ in low-dimensional semiconductors is investigated. The localization length is shown to be proportional to the number of occupied subbands in…

凝聚态物理 · 物理学 2009-10-28 S. -R. Eric Yang , J. Rammer

Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective…

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended…

We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier…

介观与纳米尺度物理 · 物理学 2007-08-14 R. V. Gorbachev , F. V. Tikhonenko , A. S. Mayorov , D. W. Horsell , A. K. Savchenko

We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are…

介观与纳米尺度物理 · 物理学 2008-01-14 Shaffique Adam , E. H. Hwang , Victor Galitski , S. Das Sarma

In this theoretical study, we explore the manner in which the quantum correction due to weak localization is suppressed in weakly-disordered graphene, when it is subjected to the application of a non-zero voltage. Using a nonequilibrium…

介观与纳米尺度物理 · 物理学 2018-03-01 J. Fransson , R. Somphonsane , H. Ramamoorthy , G. He , J. P. Bird

We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…

介观与纳米尺度物理 · 物理学 2018-02-14 Leizhi Wang , Ming Yin , Asif Khan , Sakib Muhtadi , Fatima Asif , Eun Sang Choi , Timir Datta

Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum…

介观与纳米尺度物理 · 物理学 2015-06-05 F. V. Porubaev , L. E. Golub

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

介观与纳米尺度物理 · 物理学 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi

We study diffusive magnetotransport in highly p-doped large area twisted bilayer graphene in 1{\deg}, 7{\deg}, 9{\deg} and 20{\deg} samples. We report weak localization in twisted bilayer graphene for the first time. All samples exhibit…

We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first…

介观与纳米尺度物理 · 物理学 2015-05-20 Babak Fallahazad , Seyoung Kim , Luigi Colombo , Emanuel Tutuc

The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the…

介观与纳米尺度物理 · 物理学 2009-11-07 N. S. Averkiev , L. E. Golub , S. A. Tarasenko , M. Willander

We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more…

强关联电子 · 物理学 2020-12-08 Shama , Goutam Sheet , Yogesh Singh

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with…

We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer…

We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL),…

材料科学 · 物理学 2010-08-10 Yung-Fu Chen , Myung-Ho Bae , Cesar Chialvo , Travis Dirks , Alexey Bezryadin , Nadya Mason