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The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…

超导电性 · 物理学 2009-11-11 Kevin A. Parendo , K. H. Sarwa B. Tan , A. M. Goldman

Recent experiments on type-II Weyl semimetals such as WTe$_2$, MoTe$_2$, Mo$_x$W$_{1-x}$Te$_2$ and WP$_2$ reveal remarkable transport properties in presence of a strong magnetic field, including an extremely large magnetoresistance and an…

介观与纳米尺度物理 · 物理学 2018-09-19 Maximilian Trescher , Emil J. Bergholtz , Johannes Knolle

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic…

介观与纳米尺度物理 · 物理学 2021-04-12 A. Seredinski , E. G. Arnault , V. Z. Costa , L. Zhao , T. F. Q. Larson , K. Watanabe , T. Taniguchi , F. Amet , A. K. M. Newaz , G. Finkelstein

We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished…

介观与纳米尺度物理 · 物理学 2020-03-25 B. Dalelkhan , D. Göransson , C. Thelander , K. Li , Y. J. Xing , V. F. Maisi , H. Q. Xu

We show that the two-dimensional metallic state in Si-MOS samples persists over a wide range of temperatures (16 mK to 8 K), sample peak mobilities (varying by a factor of 8), carrier densities (0.8 to $35\times 10^{11}$ cm$^{-2}$) and…

强关联电子 · 物理学 2009-10-31 V. M. Pudalov , G. Brunthaler , A. Prinz , G. Bauer

We report the magnetization, electrical resistivity, specific heat measurements and band structure calculations of layered superconductor SnTaS$_2$. The experiments are performed on single crystals grown by chemical vapor transport method.…

Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel…

介观与纳米尺度物理 · 物理学 2013-04-02 Ferdows Zahid , Lei Liu , Yu Zhu , Jian Wang , Hong Guo

We present local and nonlocal electrical transport measurements of the correlated insulator FeSb$_2$. By employing wiring configurations that delineate between bulk- and surface-dominated conduction, we reveal the formation of a metallic…

Heat dissipation is a very critical problem for designing nano-functional devices, including MoS2/Graphene heterojunctions. In this paper we investigate thermal transport in MoS2/Graphene hybrid nanosheets under various heating conditions,…

介观与纳米尺度物理 · 物理学 2015-10-20 Zhongwei Zhang , Yuee Xie , Qing Peng , Yuanping Chen

We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels.…

We have investigated the systematic transport properties of the layered 112-type cobaltite LaBaCo2O5.5 by means of electrical resistivity, magnetoresistance, electroresistance and thermoelectric measurements in various conditions. In order…

材料科学 · 物理学 2009-01-27 Asish K. Kundu , B. Raveau , V. Caignaert , E. -L. Rautama , V. Pralong

We study a two-band Hubbard model using the dynamical mean-field theory combined with the exact diagonalization method. At the electron density $n=2$, a transition from a band-insulator to a correlated semimetal occurs when the on-site…

强关联电子 · 物理学 2007-05-23 Y. Ono , K. Sano

The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At…

介观与纳米尺度物理 · 物理学 2026-03-27 Hsin-Wen Huang , Xi-Jun Fang , Edward Chen , Yuh-Renn Wu

Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the…

Materials with reduced dimensionality offer beneficial density-of-states (DOS) profiles for thermoelectric energy conversion, but can be impractical in realistic devices. Encouragingly, bulk high-symmetry materials can also exhibit similar…

材料科学 · 物理学 2026-03-10 Øven A. Grimenes , Ole M. Løvvik , Kristian Berland

The thermoelectric transport properties of CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2 were characterized between 2 and 650K. As synthesized, the polycrystalline samples are found to have lower p-type carrier concentrations than single-crystalline…

材料科学 · 物理学 2012-01-13 A. F. May , M. A. McGuire , J. Ma , O. Delaire , A. Huq , D. J. Singh , W. Cai , H. Wang

Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…

强关联电子 · 物理学 2009-10-30 K. P. Li , Dragana Popovic , S. Washburn

We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…

介观与纳米尺度物理 · 物理学 2009-11-10 Shi-Jie Yang , Yue Yu

The experimental studies about monolayer transition metal dichalcogenides in the recent year reveal this kind of compounds have many metastable phases with unique physical properties, not just 1H phases. Here, we focus on the 1T'' phase and…

材料科学 · 物理学 2020-02-12 Yanfeng Ge , Wenhui Wan , Yulu Ren , Yong Liu

Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and…