相关论文: Adsorbate-Mediated Growth of Rare-Earth Oxides on …

Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 {\deg}C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films…

Thin films of Fe(1+delta)Se(1-x)Te(x) (delta ~ 0.18 & x ~ 0.5) have been successfully grown on (100) oriented single crystalline SrTiO3 and LaAlO3 substrates by pulsed laser deposition. The crystal structure was characterized by x-ray…

Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation…

Stoichiometric, epitaxial LaCrO3 films have been grown on TiO2-terminated SrTiO3(001) substrates by molecular beam epitaxy using O2 as the oxidant. Film growth occurred in a layer-by-layer fashion, giving rise to structurally excellent…

Single phase, c-axis oriented, e-doped, Sr1-xLaxCuO2 thin films were epitaxially grown on KTaO3 and DyScO3 substrates by reactive rf sputtering. As-grown films being insulating due to oxygen excess, oxygen reduction is necessary to observe…

Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium…

Epitaxial LaRh1/2Mn1/2O3 thin films have been grown on (001)-oriented LaAlO3 and SrTiO3 substrates using pulsed laser deposition. The optimized thin film samples are semiconducting and ferromagnetic with a Curie temperature close to 100 K,…

Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction…

The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space…

Inorganic-organic interfaces are important for enhancing the power conversion efficiency of silicon-based solar cells through singlet exciton fission (SF). We elucidated the structure of the first monolayers of tetracene (Tc), a SF…

We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface.…

We report on the structural properties of epitaxial FeO layers grown by molecular beam epitaxy on MgO(111). The successful stabilization of polar FeO films as thick as 16 monolayers (ML), obtained by deposition and subsequent oxidation of…

FeSe$_{1-x}$Te$_{x}$ thin films with PbO-type structure are successfully grown on MgO(100) and LaSrAlO$_{4}$(001) substrates from FeSe$_{1-x}$Te$_{x+d}$ polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO…

We have fabricated Ce/Pd bilayers grown on the SiO$_2$ substrate by magnetron sputtering under ultrahigh vacuum. Usage of palladium layer on top of the Ce film appears to prevent effectively the sample oxidation. The thickness of the cerium…

We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si)…

Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…

CoFe2O4 thin films (5 nm and 20 nm thick) were grown by oxygen assisted molecular beam epitaxy on Pt(111) at 523~K and subsequently annealed at 773 K in vacuum or oxygen. They were characterized in-situ using Auger Electron Spectroscopy,…

We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and…

Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in…

Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we…