相关论文: Molecular Memory with Atomically-Smooth Graphene C…

We investigate bilayers of nanoporous graphene (NPG), laterally bonded carbon nanoribbons, and graphene. The electronic and transport properties are explored as a function of the interlayer twist angle using an atomistic tight-binding model…

With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for…

Coherent motion of the electrons in the Bloch states is one of the fundamental concepts of the charge conduction in solid state physics. In layered materials, however, such a condition often breaks down for the interlayer conduction, when…

We study the atomic structure of twisted bilayer graphene, with very small mismatch angles ($\theta \sim 0.28^0$), a topic of intense recent interest. We use simulations, in which we combine a recently presented semi-empirical potential for…

We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be…

Topology and electron interactions are two central themes in modern condensed matter physics. Here we propose graphene based systems where both the band topology and interaction effects can be simply controlled with electric fields. We…

Nanosize pores can turn semimetallic graphene into a semiconductor and from being impermeable into the most efficient molecular sieve membrane. However, scaling the pores down to the nanometer, while fulfilling the tight structural…

We investigated a suspended bilayer graphene where the bottom (top) layer is doped by boron (nitrogen) substitutional atoms by using Density Functional Theory (DFT) calculations. We found that at high dopant concentration (one B-N pair…

Nano Electro Mechanical (NEM) contact switches have been widely studied as one of the alternative for classical field effect transistor (FET). An ideal NEM contact switch with hysteresis free switching slope (SS) of 0 mV/dec is desired to…

Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the…

A new hyperelastic material model is proposed for graphene-based structures, such as graphene, carbon nanotubes (CNTs) and carbon nanocones (CNC). The proposed model is based on a set of invariants obtained from the right surface…

The electromagnetic response of bilayer graphene in a magnetic field is studied in comparison with that of monolayer graphene. Both types of graphene turn out to be qualitatively quite similar in dielectric and screening characteristics,…

Atomic-scale engineering typically involves bottom-up approaches, leveraging parameters such as temperature, partial pressures, and chemical affinity to promote spontaneous arrangement of atoms. These parameters are applied globally,…

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by…

Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…

Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a…

We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$…

Two-dimensional materials are popular in design of nanodevices. To improve bending stiffness of few-layered graphene ribbon, the relative sliding between neighboring layers should be avoided by method such as bonding them together. In this…

Mechanical cantilevers are central to nanotechnology, with ultimate sensitivity achieved at the atomic limit, where low bending rigidity makes stability the fundamental challenge. Here, we introduce a wrinkle-induced stiffening approach…

Results of a study on the electrochemical properties of exfoliated single and multilayer graphene flakes are presented. Graphene flakes were deposited on silicon/silicon oxide wafers to enable fast and accurate characterization by optical…