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We investigate charge transport in pentacene-graphene nanojunctions employing density functional theory (DFT) electronic structure calculations and the Landauer transport formalism. The results show that the unique electronic properties of…

介观与纳米尺度物理 · 物理学 2013-02-26 Ivan A. Pshenichnyuk , Pedro B. Coto , Susanne Leitherer , Michael Thoss

Graphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and…

介观与纳米尺度物理 · 物理学 2013-10-08 Salvador Barraza-Lopez , Markus Kindermann , M. Y. Chou

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

介观与纳米尺度物理 · 物理学 2015-06-05 J. Velasco , Y. Lee , L. Jing , G. Liu , W. Bao , C. N. Lau

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes…

We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…

介观与纳米尺度物理 · 物理学 2015-05-14 Melinda Y. Han , Juliana C. Brant , Philip Kim

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…

介观与纳米尺度物理 · 物理学 2011-08-12 Jairo Velasco , Gang Liu , Wenzhong Bao , Chun Ning Lau

Silicene (a monolayer of silicon atoms) is a quantum spin-Hall insulator, which undergoes a topological phase transition into other insulators by applying external field such as electric field, photo-irradiation and antiferromagnetic order.…

介观与纳米尺度物理 · 物理学 2013-05-07 Motohiko Ezawa

The motion of massless Dirac-electrons in graphene mimics the propagation of photons. This makes it possible to control the charge-carriers with components based on geometrical-optics and has led to proposals for an all-graphene…

The two apparently disparate phenomena, viz. the Klein tunneling and the electric field driven topological phase transition(TPT), exhibited by the silicene converge on the issue of the no change in the pseudo-spin. An ensuing possibility is…

介观与纳米尺度物理 · 物理学 2014-09-02 Partha Goswami

We theoretically discuss electronic transport via Majorana states in magnetic topological insulator-superconductor junctions with an asymmetric split of the applied bias voltage. We study normal-superconductor-normal (NSN) junctions made of…

介观与纳米尺度物理 · 物理学 2023-08-02 Daniele Di Miceli , Eduárd Zsurka , Julian Legendre , Kristof Moors , Thomas Schmidt , Llorenç Serra

We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating…

介观与纳米尺度物理 · 物理学 2007-10-11 John P Robinson , Henning Schomerus

Van der Waals heterostructures display a rich variety of unique electronic properties. To identify novel transport mechanisms, nonlocal measurements have been widely used, wherein a voltage is measured at contacts placed far away from the…

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…

介观与纳米尺度物理 · 物理学 2015-05-30 Seung-Geol Nam , Dong-Keun Ki , Jong Wan Park , Youngwook Kim , Jun Sung Kim , Hu-Jong Lee

We investigate charge transport in C$_{60}$-based single-molecule junctions with graphene electrodes employing a combination of density functional theory (DFT) electronic structure calculations and Landauer transport theory. In particular,…

介观与纳米尺度物理 · 物理学 2017-01-12 Susanne Leitherer , Pedro B. Coto , Konrad Ullmann , Heiko B. Weber , Michael Thoss

We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (\textbf{P}) configuration can be much…

介观与纳米尺度物理 · 物理学 2013-05-03 Jian-Hui Yuan , Yan Zhang , Jian-Jun Zhang , Ze Cheng

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the…

介观与纳米尺度物理 · 物理学 2009-09-08 Biswanath Chakraborty , Anindya Das , A. K. Sood

Topological effects typically discussed in the context of quantum physics are emerging as one of the central paradigms of physics. Here, we demonstrate the role of topology in energy transport through dimerized micro- and nano-mechanical…

介观与纳米尺度物理 · 物理学 2018-03-23 Chih-Chun Chien , Kirill A. Velizhanin , Yonatan Dubi , B. Robert Ilic , Michael Zwolak

Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…

介观与纳米尺度物理 · 物理学 2020-09-29 Eklavya Thareja , Ilya Vekhter , Mahmoud M. Asmar

The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…

介观与纳米尺度物理 · 物理学 2014-09-17 F. Guinea , M. I. Katsnelson
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