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相关论文: Quantum resistance metrology using graphene

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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review the recent results on the Raman spectroscopy and imaging of graphene. Raman spectroscopy and…

材料科学 · 物理学 2008-10-17 Zhen hua Ni , Ying ying Wang , Ting Yu , Ze xiang Shen

The Syst\`eme Internationale d'unit\'es (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially…

介观与纳米尺度物理 · 物理学 2012-01-09 T. J. B. M. Janssen , N. E. Fletcher , R. Goebel , J. M. Williams , A. Tzalenchuk , R. Yakimova , S. Kubatkin , S. Lara-Avila , V. I. Falko

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…

介观与纳米尺度物理 · 物理学 2015-06-04 Yike Hu , Ming Ruan , Zelei Guo , Rui Dong , James Palmer , John Hankinson , Claire Berger , Walt A. de Heer

We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…

介观与纳米尺度物理 · 物理学 2014-01-17 Dong-Keun Ki , Alberto F. Morpurgo

Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible…

We discuss the quantum Hall effect on a single-layer graphene in the framework of noncommutative (NC) phase space. We find it induces a shift in the Hall resistivity. Furthermore, comparison with experimental data reveals an upper bound on…

高能物理 - 理论 · 物理学 2018-01-11 Willien O. Santos , Guilherme M. A. Almeida , Andre M. C. Souza

The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the…

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…

材料科学 · 物理学 2013-04-26 Kosuke Nagashio , Akira Toriumi

Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in…

材料科学 · 物理学 2018-09-20 Adolfo De Sanctis , Jake D. Mehew , Monica F. Craciun , Saverio Russo

We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling…

介观与纳米尺度物理 · 物理学 2020-03-11 Jaesung Park , Wan-Seop Kim , Dong-Hun Chae

This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect…

Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous…

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics.…

介观与纳米尺度物理 · 物理学 2007-05-23 K. S. Novoselov , Z. Jiang , Y. Zhang , S. V. Morozov , H. L. Stormer , U. Zeitler , J. C. Maan , G. S. Boebinger , P. Kim , A. K. Geim

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at…

介观与纳米尺度物理 · 物理学 2016-05-25 S. Novikov , N. Lebedeva , J. Hamalainen , I. Iisakka , P. Immonen , A. J. Manninen , A. Satrapinski

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and…

介观与纳米尺度物理 · 物理学 2011-06-08 T. J. B. M. Janssen , A. Tzalenchuk , R. Yakimova , S. Kubatkin , S. Lara-Avila , S. Kopylov , V. Fal'ko

The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at…

介观与纳米尺度物理 · 物理学 2012-03-05 Tony Low , Vasili Perebeinos , Jerry Tersoff , Phaedon Avouris

Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is…

介观与纳米尺度物理 · 物理学 2022-03-15 Chieh-I Liu , Dominick S. Scaletta , Dinesh K. Patel , Mattias Kruskopf , Antonio Levy , Heather M. Hill , Albert F. Rigosi

We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2}…

介观与纳米尺度物理 · 物理学 2015-05-30 Tian Shen , Wei Wu , Qingkai Yu , Curt A Richter , Randolph Elmquist , David Newell , Yong P. Chen

Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been…

介观与纳米尺度物理 · 物理学 2018-09-28 Taiki Hirahara , Ryoya Ebisuoka , Takushi Oka , Tomoaki Nakasuga , Shingo Tajima , Kenji Watanabe , Takashi Taniguchi , Ryuta Yagi

The Hall resistance obtained in liquid gated Hall effect measurement of graphene demonstrates a higher sensitivity than the sheet resistance and the gate-source current for L-histidine of different concentrations in the pM range. This…

介观与纳米尺度物理 · 物理学 2017-12-06 Hualin Zhan , Jiri Cervenka , Steven Prawer , David J. Garrett