相关论文: Rapid diffusion of electrons in GaMnAs
Comparative studies of the resonant transmission of light in the vicinity of exciton resonances, measured for 15 few-micron GaAs crystal slabs with different impurity concentrations $N$, reveal an unexpected tendency. While $N$ spans almost…
Ultrafast optical pump-probe spectroscopy measurement on monolayer graphene observes significant optical nonlinearities. We show that strongly photoexcited graphene monolayers with 35 fs pulses quasi-instantaneously build up a broadband,…
The diffusion length of minority carriers L p,n is an important characterisation parameter in semiconductor materials and is of particular interest when constructing devices such as solar cells (Hovel 1975), double hetero junction lasers…
After two decades from the discovery of ferromagnetism in Mn-doped GaAs, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron…
Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by…
Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm…
The near- and far-field photoluminescence spectra of a gated two-dimensional electron gas have been measured. Spatial fluctuations in the electron density are found to be manifested as spatial fluctuations in the emission amplitude of the…
Raman studies on Ca4Al2O5.7Fe2As2 superconductor in the temperature range of 5 K to 300 K, covering the superconducting transition temperature Tc ~ 28.3 K, reveal that the Raman mode at ~ 230 cm-1 shows a sharp jump in frequency by ~ 2 %…
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130…
Ge$_{1-x}$Sn$_x$ semiconductors hold the premise for large-scale, monolithic mid-infrared photonics and optoelectronics. However, despite the successful demonstration of several Ge$_{1-x}$Sn$_x$-based photodetectors and emitters, key…
The electronic properties of the Mn:GaSe interface, produced by evaporating Mn at room temperature on an epsilon-GaSe(0001) single crystal surface, have been studied by soft X-ray spectroscopies. Substitutional effects of Mn replacing Ga…
The motion of electrons in or near solids, liquids and gases can be tracked by forcing their ejection with attosecond x-ray pulses, derived from femtosecond lasers. The momentum of these emitted electrons carries the imprint of the…
We propose an unconventional electron gun structure in which the emitter is located on a concave cathode surface with a non-uniform electric field. Such a design violates the intuition that an emitter should place close to a uniform…
The Fermi surfaces (FS's) and band dispersions of EuRh2As2 have been investigated using angle-resolved photoemission spectroscopy. The results in the high-temperature paramagnetic state are in good agreement with the full potential…
The static conductivity of the dilute magnetic semiconductor GaMnAs is calculated using the memory function formalism and time-dependent density-functional theory to account for impurity scattering and to treat Hartree and exchange…
In1-xMnxAs diluted magnetic semiconductor (DMS) thin films have been grown using metalorganic vapor phase epitaxy (MOVPE). Tricarbonyl(methylcyclopentadienyl)manganese was used as the Mn source. Nominally single-phase, epitaxial films were…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
A scanning force microscope with a base temperature below 300 mK is used for measuring the local electron density of a two-dimensional electron gas embedded in an Ga[Al]As heterostructure. At different separations between AFM tip and…
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed…
Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 \AA) exhibit magnetic properties different than…