相关论文: Theory of helicity-sensitive terahertz radiation d…

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the…

This is a brief overview of the main physical ideas for application of field effect transistors for generation and detection of TeraHertz radiation. Resonant frequencies of the two-dimensional plasma oscillations in FETs increase with the…

We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the…

We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the gate voltage and magnetic field.…

Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is…

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel…

We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime.…

Detectors of terahertz radiation based on field-effect transistors (FETs) are among most promising candidates for low-noise passive signal rectification both in imaging systems and wireless communications. However, it was not realised so…

We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…

Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene Field Effect Transistor connected to…

The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors. Here we report…

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect…

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors…

We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps…

Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear…

We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The…

Field-effect transistors coupled to integrated antennas (TeraFETs) are photodetectors being actively developed for the THz frequency range ($\sim$ 100 GHz - 10 THz). Among them, Graphene TeraFETs (G-TeraFETs) have demonstrated distinctive…

We discuss inverse problem of detection turbulence magnetic field helical properties using radio survey observations statistics. In this paper, we present principal solution which connects magnetic helicity and correlation between Faraday…

Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…

We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling…