Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
@article{arxiv.0907.2523,
title = {Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications},
author = {W. Knap and M. Dyakonov and D. Coquillat and F. Teppe and N. Dyakonova and J. Łusakowski and K. Karpierz and M. Sakowicz and G. Valusis and D. Seliuta and I. Kasalynas and A. El Fatimy and Y. Meziani and T. Otsuji},
journal= {arXiv preprint arXiv:0907.2523},
year = {2015}
}