THz emission induced by optical beating in nanometer-length field-effect-transistors
Mesoscale and Nanoscale Physics
2011-07-22 v2 Other Condensed Matter
Abstract
Experimental results of direct measurement of resonant monochromatic terahertz emission optically excited in InGaAs transistor channels are presented. The emission is attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of GHz (with from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. Numerical results support that such a high quality of the emission resonances can be explained by the approach of an instability in the transistor channel.
Cite
@article{arxiv.1009.0426,
title = {THz emission induced by optical beating in nanometer-length field-effect-transistors},
author = {P. Nouvel and J. Torres and H. Marinchio and T. Laurent and C. Palermo and L. Varani and P. Shiktorov and E. Starikov and V. Gruzinskis and F. Teppe},
journal= {arXiv preprint arXiv:1009.0426},
year = {2011}
}
Comments
Under review in Phys. Rev. B