We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers density and drift velocity.
@article{arxiv.1011.4227,
title = {Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors},
author = {S. Boubanga-Tombet and F. Teppe and J. Torres and A. El Moutaouakil and D. Coquillat and N. Dyakonova and C. Consejo and P. Arcade and P. Nouvel and H. Marinchio and T. Laurent and C. Palermo and A. Penarier and T. Otsuji and L. Varani and 3 and W. Knap},
journal= {arXiv preprint arXiv:1011.4227},
year = {2015}
}