Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

A. Kadykov; F. Teppe; C. Consejo; L. Viti; M. Vitiello; D. Coquillat; S. Ruffenach; S. Morozov; S. Kristopenko; M. Marcinkiewicz; N. Dyakonova; W. Knap; V. Gavrilenko; N. N. Michailov; S. A. Dvoretskii

doi:10.1063/1.4932943

Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

Mesoscale and Nanoscale Physics 2018-05-01 v1 Materials Science

Authors: A. Kadykov , F. Teppe , C. Consejo , L. Viti , M. Vitiello , D. Coquillat , S. Ruffenach , S. Morozov , S. Kristopenko , M. Marcinkiewicz , N. Dyakonova , W. Knap , V. Gavrilenko , N. N. Michailov , S. A. Dvoretskii

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors.

Keywords

terahertz detection hgte field-effect transistor topological phase transition quantum spin hall effect landau levels

Cite

@article{arxiv.1804.11263,
  title  = {Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors},
  author = {A. Kadykov and F. Teppe and C. Consejo and L. Viti and M. Vitiello and D. Coquillat and S. Ruffenach and S. Morozov and S. Kristopenko and M. Marcinkiewicz and N. Dyakonova and W. Knap and V. Gavrilenko and N. N. Michailov and S. A. Dvoretskii},
  journal= {arXiv preprint arXiv:1804.11263},
  year   = {2018}
}

Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

Abstract

Keywords

Cite

Related papers