English

Terahertz Quantum Hall Effect in a Topological Insulator

Strongly Correlated Electrons 2013-03-27 v1 Materials Science

Abstract

Using THz spectroscopy in external magnetic fields we investigate the low-temperature charge dynamics of strained HgTe, a three dimensional topological insulator. From the Faraday rotation angle and ellipticity a complete characterization of the charge carriers is obtained, including the 2D density, the scattering rate and the Fermi velocity. The obtained value of the Fermi velocity provides further evidence for the Dirac character of the carriers in the sample. In resonator experiments, we observe quantum Hall oscillations at THz frequencies. The 2D density estimated from the period of these oscillations agrees well with direct transport experiments on the topological surface state. Our findings open new avenues for the studies of the finite-frequency quantum Hall effect in topological insulators.

Keywords

Cite

@article{arxiv.1208.1115,
  title  = {Terahertz Quantum Hall Effect in a Topological Insulator},
  author = {A. M. Shuvaev and G. V. Astakhov and G. Tkachov and C. Brüne and H. Buhmann and L. W. Molenkamp and A. Pimenov},
  journal= {arXiv preprint arXiv:1208.1115},
  year   = {2013}
}

Comments

5 pages, 3 figures

R2 v1 2026-06-21T21:46:42.762Z