Quantum Hall effect of the surface states in topological insulator
Abstract
We study the quantum Hall effect in the surface states of topological insulator in the presence of a perpendicular magnetic field in the framework of edge states. Motion of Dirac fermions will form descrete Landau levels, among which a fully saturated zero mode will have different behaviors near the boundary according to the sign of the effective mass for Dirac fermions. The Hall conductance is quantized to be n (n is an integer) in the unit of e^2/h for a positive mass, n+1 for a negative mass, and n+1/2 for massless fermions. In topological insulator the massive term to the Dirac fermions can be the Zeeman coupling in a magnetic field or be induced by the finite-size effect in an ultrathin film. For example the g-factor of Bi_2Se_3 is positive and give rise to a positive mass term for Dirac fermions. We address experimental realization of the quantum Hall effect in topological insulators.
Keywords
Cite
@article{arxiv.0909.4125,
title = {Quantum Hall effect of the surface states in topological insulator},
author = {Shun-Qing Shen},
journal= {arXiv preprint arXiv:0909.4125},
year = {2009}
}
Comments
4 pages, 1 figure