English

Unconventional quantum Hall effect in Floquet topological insulators

Mesoscale and Nanoscale Physics 2016-08-24 v1

Abstract

We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity σyx=0\sigma_{yx}=0 at zero Fermi energy, to a Hall insulator state with σyx=e2/2h\sigma_{yx}=e^2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaux at (±1/2,±3/2,±5/2,...)e2/h(\pm1/2,\pm3/2,\pm5/2,...)e^2/h.

Keywords

Cite

@article{arxiv.1607.06119,
  title  = {Unconventional quantum Hall effect in Floquet topological insulators},
  author = {M. Tahir and P. Vasilopoulos and U. Schwingenschlog},
  journal= {arXiv preprint arXiv:1607.06119},
  year   = {2016}
}

Comments

Accepted in J. Phys. Condensed Matter july 2016

R2 v1 2026-06-22T14:59:52.857Z