Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

C. Brüne; C. X. Liu; E. G. Novik; E. M. Hankiewicz; H. Buhmann; Y. L. Chen; X. L. Qi; Z. X. Shen; S. C. Zhang; L. W. Molenkamp

doi:10.1103/PhysRevLett.106.126803

Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

Mesoscale and Nanoscale Physics 2015-03-17 v1 Materials Science

Authors: C. Brüne , C. X. Liu , E. G. Novik , E. M. Hankiewicz , H. Buhmann , Y. L. Chen , X. L. Qi , Z. X. Shen , S. C. Zhang , L. W. Molenkamp

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Abstract

We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.

Keywords

quantum Hall effect topological insulator HgTe surface states strain-induced band gap transport

Cite

@article{arxiv.1101.2627,
  title  = {Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe},
  author = {C. Brüne and C. X. Liu and E. G. Novik and E. M. Hankiewicz and H. Buhmann and Y. L. Chen and X. L. Qi and Z. X. Shen and S. C. Zhang and L. W. Molenkamp},
  journal= {arXiv preprint arXiv:1101.2627},
  year   = {2015}
}

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7 pages, 6 figures

Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

Abstract

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