相关论文: Design principles for HgTe based topological insul…
Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in…
Quantum spin Hall insulators, or synonymously known as 2D topological insulators, are crucial 2D systems hosting topologically protected edge states. The working temperature of this topological quantum phase is dictated by the inverted…
Topological phases with insulating bulk and gapless surface or edge modes have attracted much attention because of their fundamental physics implications and potential applications in dissipationless electronics and spintronics. In this…
We study the quantum Hall effect (QHE) in the three-dimensional topological insulator HgTe, which features topological Dirac-type surface states in a bulk gap opened by strain. Despite the co-existence of multiple carrier subsystems, the…
Topological insulators are characterized by a nontrivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we…
Topological insulators are new class of materials which are characterized by a bulk band gap like ordinary band insulator but have protected conducting states on their edge or surface. These states emerge out due to the combination of…
In spite of a large quantity of papers devoted to the mangetoluminescence from CdTe/(Cd,Mg)Te, quantum wells there have been no attempts to analyze it on the basis of the band-structure calculations. This has been proposed in the present…
Topological crystalline insulators (TCIs) host topological phases of matter protected by crystal symmetries. Topological surface states in three-dimensional TCIs have been predicted and observed in IV-VI SnTe-class semiconductors. Despite…
The influence of bulk inversion asymmetry in [001] and [013] grown HgTe quantum wells is investigated theoretically. The bulk inversion asymmetry leads to an anti-crossing gap between two zero-mode Landau levels in a HgTe topological…
The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of…
We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional…
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a…
We study the evolutions of the nonmagnetic disorder-induced edge states with the disorder strength in the HgTe/CdTe quantum wells. From the supercell band structures and wave-functions, it is clearly shown that the conducting helical edge…
To understand the seemingly absent temperature dependence in the conductance of two-dimensional topological insulator edge states, we perform a numerical study which identifies the quantitative influence of the combined effect of dephasing…
We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterize its electronic structure with scanning tunneling microscopy / spectroscopy (STM/STS). We demonstrate the…
The recent discovery of topological insulator (TI) offers new opportunities for the development of thermoelectrics, because many TIs (like Bi$_2$Te$_3$) are excellent thermoelectric (TE) materials. In this review, we will first describe the…
We report unconventional transport properties of HgTe wells with inverted band structure: the resistance does not show insulating behavior even when it is of the order of $10^2\times h/2e^{2}$. The system is expected to be a two-dimensional…
We investigate the electron states in double asymmetric $\rm{HgTe/Cd_{x}Hg_{1-x}Te}$ quantum wells grown along the $[001]$ direction. The subbands are computed by means of the envelope function approximation applied to the 8-band Kane…
In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices:…
Topological crystalline insulators are new states of matter in which the topological nature of electronic structures arises from crystal symmetries. Here we predict the first material realization of topological crystalline insulator in the…