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相关论文: Adsorption of silicon on Au(110): an ordered two d…

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On-surface metal-organic coordination provides a promising way for synthesizing different two-dimensional lattice structures that have been predicted to possess exotic electronic properties. Using scanning tunneling microscopy (STM) and…

材料科学 · 物理学 2019-10-04 Linghao Yan , Ilona Pohjavirta , Benjamin Alldritt , Peter Liljeroth

The c(6x2) is a reconstruction of the SrTiO3(001) surface that is formed between 1050-1100oC in oxidizing annealing conditions. This work proposes a model for the atomic structure for the c(6x2) obtained through a combination of results…

In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125-230 K using a variable-temperature scanning tunneling…

介观与纳米尺度物理 · 物理学 2017-06-28 Rakesh Kumar , Chuang-Kai Fang , Chih-Hao Lee , Ing-Shouh Hwang

In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L)…

The self-assembly of submonolayer amounts of Au on the densely stepped Si(553) surface creates an array of closely spaced \atomic wires" separated by 1.5 nm. At low temperature, charge transfer between the terraces and the row of silicon…

介观与纳米尺度物理 · 物理学 2020-01-15 B. Hafke , C. Brand , T. Witte , B. Sothmann , M. Horn-von Hoegen , S. C. Erwin

We report that electricity can be generated from limitless thermal motion of ions by two dimensional (2D) surface of silicon wafer at room temperature. A typical silicon device, on which asymmetric electrodes with Au and Ag thin films were…

介观与纳米尺度物理 · 物理学 2013-10-22 Guo'an Tai , Zihan Xu

Recent experiments on model catalysts have shown that Ag-Cu alloys have improved selectivity with respect to pure silver for ethylene epoxidation. In this paper we review our first-principles investigations on the (111) surface of this…

材料科学 · 物理学 2015-05-13 Simone Piccinin , Catherine Stampfl , Matthias Scheffler

The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a…

介观与纳米尺度物理 · 物理学 2009-09-25 L. Canali , J. W. G. Wildoer , O. Kerkhof , L. P. Kouwenhoven

In this work, we have studied theoretically the effects of gold adsorption on the Al(001) surface, using {\it ab initio} pseudo-potential method in the framework of the density functional theory. Having found the hollow sites at the Al(001)…

材料科学 · 物理学 2009-11-13 N. Zare Dehnavi , M. Payami

Equilibrium atomic configurations and electron energy structure of ethanol adsorbed on the Si (111) surface are studied by the first-principles density functional theory. Geometry optimization is performed by the total energy minimization…

计算物理 · 物理学 2008-02-11 A. V. Gavrilenko , C. E. Bonner , V. I. Gavrilenko

A long-standing controversy related to the dimer pattern formed by S atoms in methanethiol ($CH_{3}SH$) on the Au(111) surface has been resolved using density functional theory. For the first time, dimerization of methanethiol adsorbates on…

材料科学 · 物理学 2009-11-13 Jian-Ge Zhou , Quinton L. Williams , Frank Hagelberg

The deposition of one silicon monolayer on Ag(111) gives rise to a set of superstructures depending on growth conditions. These superstructures are correlated to the epitaxy between the honeycomb structure of silicon (so called silicene)…

材料科学 · 物理学 2015-09-30 H. Jamgotchian , B. Ealet , Y. Colignon , H. Maradj , J-Y. Hoarau , J-P. Biberian , B. Aufray

The self-limiting nature of atomic layer deposition (ALD) makes it an appealing option for growing single layers of two-dimensional van der Waals (2D-VDW) materials. In this paper it is demonstrated that a single layer of a 2D-VDW form of…

We report on results of a theoretical study of the adsorption process of a single carbon oxide molecule on a Platinum (111) surface. A four-component relativistic density functional method was applied to account for a proper description of…

原子与分子团簇 · 物理学 2009-11-07 D. Geschke , T. Bastug , T. Jacob , S. Fritzsche , W. -D. Sepp , B. Fricke

The electrical conductivity changes of the Si(111)-(6x6)Au surface at early stage of Pb deposition was studied experimentally and theoretically as a function of coverage. Pb deposition onto a Si(111)-(6x6)Au surface induce strong change of…

介观与纳米尺度物理 · 物理学 2007-05-23 T. Kwapinski , Z. Korczak , M. Jalochowski

We designed ordered and disordered silicon (Si) nanowire structures and analyzed their optical performance using the finite-difference time-domain (FDTD) technique. We studied the orderness of nanowire structures by calculating scalar…

光学 · 物理学 2023-09-19 Ohidul Islam , Dip Sarker , K. B. M. Sharif Mahmood , Joyprokash Debnath

Hf silicate films (HfO_2)_{0.25}(SiO_2)_{0.75} with thicknesses in the range 4-20 nm were grown on silicon substrate by atomic layer deposition at 350 deg.C.The Hf distributions in as-grown and 800 deg.C annealed films were investigated by…

材料科学 · 物理学 2010-09-28 J. Liu , X. Wu , W. N. Lennard , D. Landheer , M. W. C. Dharma-Wardana

In this paper we investigate by means of first-principles density functional theory calculations the (111) surface of the Ag-Cu alloy under varying conditions of pressure of the surrounding oxygen atmosphere and temperature. This alloy has…

材料科学 · 物理学 2009-11-13 Simone Piccinin , Catherine Stampfl , Matthias Scheffler

The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying…

材料科学 · 物理学 2009-11-11 D. Pachinger , H. Lichtenberger und F. Schaeffler

Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO$_{2}$ thin films, by itself or in combination with SiO$_{2}$, has not been widely investigated yet. Here we report the ALD growth of SiO$_{2}$/GeO$_{2}$…