English

Low temperature STM on InAs (110) accumulation surfaces

Mesoscale and Nanoscale Physics 2009-09-25 v2 Materials Science
Authors: L. Canali , J. W. G. Wildoer , O. Kerkhof , L. P. Kouwenhoven
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Abstract

The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measurements in high-magnetic field demonstrate Landau quantization of the energy spectrum, both in the 2D subbands and the 3D bulk conduction band.

Keywords

surface science thermal properties of materials

Cite

@article{arxiv.cond-mat/9708098,
  title  = {Low temperature STM on InAs (110) accumulation surfaces},
  author = {L. Canali and J. W. G. Wildoer and O. Kerkhof and L. P. Kouwenhoven},
  journal= {arXiv preprint arXiv:cond-mat/9708098},
  year   = {2009}
}

Comments

7 pages, 5 figures. Se also http://vortex.tn.tudelft.nl/mensen/leok/papers/

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